MJ10001 NTE

NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, highspeed, power switching in inductive circuits where falltime is critical. They are particularly suited for line operated switchmode applications. Applications: Switching Regulators Inverters Solenoid and Relay Drivers Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEX(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, V = 500V 500 V CEO(sus) C B clamp V I = 2A, V = 500V, T = +100C 500 V CEX(sus) C clamp C I = 5A, V = 500V, T = +100C 375 V C clamp C Collector Cutoff Current I V = 700V, V = 1.5V 0.25 mA CEV CEV BE(off) V = 700V, V = 1.5V, T = +150C 5.0 mA CEV BE(off) C I V = 700V, R = 50 , T = +100C 5.0 mA CER CE BE C Emitter Cutoff Current I V = 2V, I = 0 175 mA EBO EB C ON Characteristics (Note 3) DC Current Gain h V = 5V, I = 5A 40 400 FE CE C V = 5V, I = 10A 30 300 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 500mA 2.0 V CE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C I = 20A, I = 2A 3.5 V C B BaseEmitter Saturation Voltage V I = 10A, I = 500mA 2.5 V BE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C Diode Forward Voltage V I = 5A, Note 3 3 5 V F F Dynamic Characteristics SmallSignal Current Gain h V = 10V, I = 1A, f = 1MHz 8 fe CE C test Output Capacitance C V = 50V, I = 0, f = 100kHz 100 325 pF ob CB E test Switching Characteristics (Resistive Load) Delay Time t 0.12 0.25 s V = 250V, I = 10A, I = 500mA, d CC C B1 V = 5V, t = 50 s, Duty Cycle 2% BE(off) p Rise Time t 0.5 1.5 s r Storage Time t 0.8 2.0 s s Fall Time t 0.2 0.6 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t I = 10A Peak, V = 250V, 1.5 3.5 s sv C clamp I = 500mA, V = 5V, T = +100C B1 BE(off) C Crossover Time t 0.36 1.6 s c Storage Time t 0.8 s I = 10A Peak, V = 250V, sv C clamp I = 500mA, V = 5V, T = +25C B1 BE(off) C Crossover Time t 0.18 s c Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%. Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V ) of this diode is F comparable to that of typical fast recovery rectifiers.