X-On Electronics has gained recognition as a prominent supplier of MJ10009 across the USA, India, Europe, Australia, and various other global locations. MJ10009 are a product manufactured by NTE. We provide cost-effective solutions for MJ10009, ensuring timely deliveries around the world.

MJ10009 NTE

MJ10009 electronic component of NTE
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See Product Specifications
Part No.MJ10009
Manufacturer: NTE
Category: Unclassified
Description: NPN TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Transition Frequency ft:-; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-3; No. of Pins:3Pins; Operating Temperature Max:200C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Operating Temperature Min:-65C; Operating Temperature Range:-65C to +200C
Datasheet: MJ10009 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 10.8085 ea
Line Total: USD 108.08 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 10.8085
50 : USD 7.5638
100 : USD 6.9741
200 : USD 6.4751
500 : USD 6.0442

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 14.5921
5 : USD 10.6806
10 : USD 8.7887
50 : USD 8.1695
100 : USD 7.4088

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJ10009 from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ10009 and other electronic components in the NTE manufacturer and beyond.

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NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, highspeed, power switching in inductive circuits where falltime is critical. They are particularly suited for line operated switchmode applications. Applications: Switching Regulators Inverters Solenoid and Relay Drivers Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEX(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, V = 500V 500 V CEO(sus) C B clamp V I = 2A, V = 500V, T = +100C 500 V CEX(sus) C clamp C I = 5A, V = 500V, T = +100C 375 V C clamp C Collector Cutoff Current I V = 700V, V = 1.5V 0.25 mA CEV CEV BE(off) V = 700V, V = 1.5V, T = +150C 5.0 mA CEV BE(off) C I V = 700V, R = 50 , T = +100C 5.0 mA CER CE BE C Emitter Cutoff Current I V = 2V, I = 0 175 mA EBO EB C ON Characteristics (Note 3) DC Current Gain h V = 5V, I = 5A 40 400 FE CE C V = 5V, I = 10A 30 300 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 500mA 2.0 V CE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C I = 20A, I = 2A 3.5 V C B BaseEmitter Saturation Voltage V I = 10A, I = 500mA 2.5 V BE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C Diode Forward Voltage V I = 5A, Note 3 3 5 V F F Dynamic Characteristics SmallSignal Current Gain h V = 10V, I = 1A, f = 1MHz 8 fe CE C test Output Capacitance C V = 50V, I = 0, f = 100kHz 100 325 pF ob CB E test Switching Characteristics (Resistive Load) Delay Time t 0.12 0.25 s V = 250V, I = 10A, I = 500mA, d CC C B1 V = 5V, t = 50 s, Duty Cycle 2% BE(off) p Rise Time t 0.5 1.5 s r Storage Time t 0.8 2.0 s s Fall Time t 0.2 0.6 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t I = 10A Peak, V = 250V, 1.5 3.5 s sv C clamp I = 500mA, V = 5V, T = +100C B1 BE(off) C Crossover Time t 0.36 1.6 s c Storage Time t 0.8 s I = 10A Peak, V = 250V, sv C clamp I = 500mA, V = 5V, T = +25C B1 BE(off) C Crossover Time t 0.18 s c Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%. Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V ) of this diode is F comparable to that of typical fast recovery rectifiers.

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