NTE265 Silicon NPN Transistor Darlington Power Amplifier Features: Forward Current Transfer Ratio: h = 10,000 Min FE Power Dissipation: 1.33W FreeAir T = +50C A Hard Solder Mountdown Applications: Driver, IC Driver Regulator Touch Switch Audio Output Relay Substitute Oscillator ServoAmplifier Capacitor Multiplier Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectortoEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO CollectortoEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CES EmittertoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V EBO Collector Current (Note 1), I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Power Dissipation, P D T = +25C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W C T = +70C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W C T = +50C A With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Without Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Thermal Resistance, JunctiontoCase (Note 2), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W JC Thermal Resistance, JunctiontoAmbient (Note 2), R JA With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Without Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W Operating Junction Temperature range (Note 2), T . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature range (Note 2), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec Max, Note 2), T . . . . . . . . . . +260C L Note 1. Pulse Test: Pulse Width = 25ms, Duty Cycle = 50% Note 2. Tab temperature is measured on center of tab, 1/16 from plastic body.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio h I = 200mA, V = 5V 10k 60k FE C CE h I = 20mA, V = 5V, f = 1kHz 10k fe C CE CollectortoEmitter Voltage V I = 10mA 50 V CEO C Collector Saturation Voltage V I = 500mA, I = 0.5mA, Note 3 1.5 V CE(sat) C B Base Saturation Voltage V I = 500mA, I = 0.5mA, Note 3 2.0 V BE(sat) C B Collector Cutoff Current I V = 50V, T = +25C 0.5 A CES CE J I V = 50V, T = +150C 20 A CBO CE J Emitter Cutoff Current I V = 13V 0.1 A EBO EB Input Impedance h I = 20mA, V = 5V, f = 1kHz 50 500 ie C CE Collector Capacitance C V = 10V, f = 1MHz 5 10 pF cbo CB Gain Bandwidth Product f V = 5V, I = 20mA 75 MHz T CE C Delay Time and Rise Time t + t I = 1A, I = 1mA 100 ns d r C B1 Storage Time t I = 1A, I = I = 1mA 350 ns s C B1 B2 Fall Time t I = 1A, I = I = 1mA 800 ns f C B1 B2 Note 3. Pulsed measurement: Pulse Width = 300 s, Duty Cycle 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 C 1.200 (9.52) (30.48) B Ref .070 (1.78) x 45 Chamf .300 (7.62) E .050 (1.27) .400 (10.16) Min EB C .100 (2.54) .100 (2.54)