NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high-current applications such as volt age regulators. Features: Low Collector-Emitter Saturation Voltage: V = 1.5V Max I = 1.5A CE(sat) C TO202 Type Package: 2W Free Air Dissipation T = +25 C A Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CES Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V EBO Colllector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W A D Derate Above 25 C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Thermal Resistance, Junction-to-Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 C/W thJA Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5 C/W thJC Note 1. Pulse Width 25ms, Duty Cycle 50%. Note 2. The actual power dissipation capability of the TO202 type package is 2W T = +25 C. AElectrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 10mA, Note 3 50 - - V (BR)CEO C Collector Cutoff Current I V = 50V, I = 0, T = +150C - - 20 A CBO CB E J I V = 50V, V = 0 - - 0.5 A CES CE BE Emitter Cutoff Current I V = 13V, I = 0 - - 100 nA EBO EB C ON Characteristics (Note 4) DC Current Gain h I = 200mA, V = 5V 10000 - - FE C CE I = 1.5A, V = 5V 1000 - - C CE Collector-Emitter Saturation Voltage V I = 1.5A, I = 3mA - - 1.5 V CE(sat) C B Base-Emitter Saturation Voltage V I = 1.5A, I = 3mA - - 2.5 V BE(sat) C B Dynamic Characteristics Collector Capacitance C cb NTE268 V = 10V, I = 0, f = 1MHz - - 10 pF CB E NTE269 - - 25 pF High Frequency Current Gain h I = 20mA, V = 5V, f = 100MHz 1.0 - - fe C CE Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. NTE268 C .380 (9.56) .180 (4.57) B .132 (3.35) Dia C E .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) NTE269 .400 C (10.16) Min B EB C .100 (2.54) .100 (2.54) E