NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch TO3PN Type Package Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO3PN type package designed for general purpose amplifier and low frequency switching applica- tions. Features: High DC Current Gain: h = 1000 Min I = 5A, V = 4V FE C CE Collector Emitter Sustaining Voltage: V = 100V Min 30mA CEO(sus) Monolithic Construction with Built In Base Emitter Shunt Resistor Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 100V CEO Collector Base Voltage, V ........................................................ 100V CB EmitterBase Voltage, V ........................................................... 5V EB Collector Current, I C Continuous .................................................................. 10A Peak (Note 1) ................................................................ 15A Continuous Base Current, I ...................................................... 500mA B Total Device Dissipation (T = +25C), P ........................................... 125W C D Operating Junction Temperature Range, T .................................. 65 to +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 35.7 C/W thJA Note 1. Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 30mA, I = 0, Note 2 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 2.0 mA CEO CE B I V = 100V, I = 0 1.0 mA CBO CB E Emitter Cutoff Current I V = 5V 2.0 mA EBO BE Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Rev. 215Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h I = 5A, V = 4V 1000 FE C CE I = 10A, V = 4V 500 C CE CollectorEmitter Saturation Voltage V I = 5A, I = 10mA 2.0 V CE(sat) C B I = 10A, I = 40mA 3.0 V C B BaseEmitter Saturation Voltage V I = 10A, I = 40mA 3.5 V BE(sat) C B Switching Characteristics (Resistive Load) Delay Time t 0.15 s V = 30V, I = 5A, d CC C I = 20mA, Duty Cycle 2%, B Rise Time t 0.55 s r I = I , R & R Varied, B1 B2 C B T = +25C Storage Time t J 2.5 s s Fall Time t 2.5 s f Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. NTE270 NTE271 C C B B E E .189 (4.8) .614 (15.6) .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) BC E .215 (5.45)