X-On Electronics has gained recognition as a prominent supplier of NTE2688 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2688 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2688 NTE

NTE2688 electronic component of NTE
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See Product Specifications
Part No.NTE2688
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220
Datasheet: NTE2688 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.0519 ea
Line Total: USD 6.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 5.985
50 : USD 3.564
100 : USD 3.294
200 : USD 3.0564
500 : USD 2.8512

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.0519
3 : USD 5.4549
4 : USD 4.6407
11 : USD 4.3828
25 : USD 4.3286

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2688 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2688 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2688 Silicon NPN Transistor Fast Switching for High Frequency Inverter TO220 Type Package Features: Collector Emitter Sustaining Voltage: V = 450V Min CE(sus) Fast Switching Speed Low Saturation Voltage Applications: Switching Regulators High Frequency Inverters General Purpose Power Amplifiers Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Collector Base Voltage, V ...................................................... 600V CBO CollectorEmitter Voltage, V ..................................................... 450V CEO CollectorEmitter Voltage (V = 5V), V ........................................... 600V EB CEX EmitterBase Voltage, V .......................................................... 7V EBO Collector Current, I C Continuous ................................................................... 8A Peak ....................................................................... 16A Base Current, I B Continuous ................................................................... 4A Peak ........................................................................ 8A Total Power Dissipation (T = +25 C), P ............................................ 60W C D Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 2.08 C/W thJCElectrical Characteristic: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 0.2A, I = 0A 450 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 4A, I = 0.8A 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4A, I = 0.8A 1.5 V BE(sat) C B Collector Cutoff Current I At rated voltage 100 A CBO I At rated voltage 100 A CEO Emitter Cutoff Current I At rated voltage 100 A EBO DC Current Gain h I = 4A, V = 5V 10 FE C CE I = 1mA, V = 5V 5 C CE Current Gain Bandwidth Product f I = 0.8A, V = 10V 20 MHz T C CE TurnOn Time t 0.5 s I = 4A, I = 0.8A, I = 1.6A, on C B1 B2 R = 37.5 , V = 4V L BB2 TurnOff Time t 2.0 s off Fall Time t 0.2 s f .420 (10.67) Max .110 (2.79) Tab .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .100 (2.54) Base Emitter Collector/Tab .070 (1.78) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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