NTE2681 Silicon NPN Transistor High Speed Switch w/Internal Damper Diode TO3PMLH Type Package Features: High Switching Speed High Breakdown Voltage: V = 1600V CBO High Reliability Built in Damper Diode Applications: Horizontal Deflection Output for Ultrahigh Definition CRT Displays Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1600V CBO CollectorEmitter Voltage, V ..................................................... 800V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous .................................................................. 15A Peak ....................................................................... 35A Collector Power Dissipation, P ...................................................... 3W C Collector Power Dissipation (T = +25C), P ......................................... 85W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 10 A CBO CB E I V = 1600V, R = 0 1.0 mA CES CE BE Emitter Cutoff Current I V = 4V, I = 0 40 200 mA EBO EB C DC Current Gain h V = 5V I = 1A 8 FE CE C I = 11A 4 C CollectorEmitter Saturation Voltage V I = 10A, I = 2.5A 3.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 10A, I = 2.5A 1.5 V BE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Diode Forward Voltage V I = 12A 2.2 V F EC Storage Time t 3.0 s I = 7A, I = 900mA, stg C B1 I = 3.5A B2 Fall Time t 0.2 s f .220 (5.6) .630 (16.0) .122 (3.1) .197 (5.0) .315 (8.0) .866 (22.0) .827 (21.0) BC E .157 (4.0) .083 (2.1) .803 (20.4) .215 (5.45)