NTE2689 Silicon NPN Transistor Audio Power Amp SOT23 Type Package Description: The NTE2689 is a silicon NPN transistor in an SOT23 surface mount type package designed for use in audio power amplifier applications. Features: High DC Current Gain Absolute Maximum Ratings: Collector Base Voltage, V ....................................................... 35V CBO CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I ............................................................. 800mA C Collector Dissipation (Note 1), P ................................................ 350mW C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. Package mounted on 99.5% alumina 10 x 8 x 0.6mm. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage BV I = 100 A, I = 0 35 V CBO C E Collector Emitter Breakdown Voltage BV I = 1mA, I = 0 30 V CEO C B EmitterBase Breakdown Voltage BV I = 10 A, I = 0 5 V EBO E C Collector CutOff Current I V = 35V, I = 0 0.1 A CBO CB E Emitter CutOff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 1V, I = 100mA 160 320 FE CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 0.5 V CE(sat) C B Transition Frequency f V = 5V, I = 10mA 120 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 13 pF ob CB E.016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)