X-On Electronics has gained recognition as a prominent supplier of NTE2659 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2659 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2659 NTE

NTE2659 electronic component of NTE
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See Product Specifications
Part No.NTE2659
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 25V; 2A; 1W; TO92
Datasheet: NTE2659 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.8475 ea
Line Total: USD 76.95 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.8475
50 : USD 2.5056
100 : USD 2.3112
200 : USD 2.1276
500 : USD 1.9872

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.4507
3 : USD 4.0029
6 : USD 2.9038
15 : USD 2.7545

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2659 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2659 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2659 (NPN) & NTE2660 (PNP) Silicon Complementary Transistors Medium Power Features: Low Saturation Voltage Applications: Motor Driver DCtoDC Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Peak Pulse Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A CM Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Derate above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/ C Operating Temperature Range,T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 C/W thJA1 Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . 116 C/W thJA2 Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 C/W thJC Note 1. Device mounted on P.C.B. with copper equal to 1sq. Inch minimum Electrical Characteritics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100A 35 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 10mA, Note 2 25 V (BR)CEO C EmitterBase Breakdown Voltage V I = 100A 5 V (BR)EBO E Collector CutOff Current I V = 30V 0.1 A CBO CB 10 V = 30V, T = +100C CB A Emitter CutOff Current I V = 4V 0.1 A EBO EB CollectorEmitter Saturation Voltage V I = 1A, I = 100mA, Note 2 0.12 0.3 V CE(sat) C B I = 2A, I = 200mA, Note 2 0.23 0.5 C B BaseEmitter Saturation Voltage V I = 1A, I = 100mA, Note 2 0.9 1.25 V BE(sat) C B BaseEmitter TurnOn Voltage V I = 1A, V = 2V, Note 2 0.8 1 V BE(on) C CE Note 2. Measured under pulsed conditions: Pulse Width = 300 s, Duty Cycle 2%.Electrical Characteritics (Contd) : (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Forward Current Transfer Ratio h I = 50mA, V = 2V, Note 2 70 200 FE C CE I = 1A, V = 2V, Note 2 100 200 300 C CE I = 2A, V = 2V, Note 2 75 150 C CE I = 6A, V = 2V, Note 2 15 50 C CE Transition Frequency NTE2659 f I = 100mA, V = 5V, f = 100MHz 150 240 MHz T C CE NTE2660 100 160 Output Capacitence NTE2659 C V = 10V, f = 1MHz 25 50 pF obo CB NTE2660 I = 100mA, V = 5V, f = 100MHz 55 100 C CE Switching Times NTE2659 t I = 500mA, V = 10V, I =I =50mA 55 ns on C CC B1 B2 t 300 off NTE2660 t 40 ns on t 450 off Note 2. Measured under pulsed conditions: Pulse Width = 300 s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Seating Plane Max .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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