X-On Electronics has gained recognition as a prominent supplier of NTE2654 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2654 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2654 NTE

NTE2654 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2654
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 230V; 15A; 130W; TO3P
Datasheet: NTE2654 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.0438 ea
Line Total: USD 8.04 
Availability - 1
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 8.0438
5 : USD 7.3125
50 : USD 5.825
100 : USD 5.65
250 : USD 5.475
500 : USD 5.175
1000 : USD 5.05
2500 : USD 4.975

23
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.274
3 : USD 5.894
8 : USD 5.572

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2654 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2654 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2654 (NPN) & NTE2664 (PNP) Silicon Complementary Transistors Audio Power Amp Output Features: High Collector Breakdown Voltage Suitable for use in 80W High Fidelity Audio Amplifier Output Stage Absolute Maximum Ratings: (T = +25 C unles otherwise specified) C Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V CBO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Electrical Characteristics: (T = +25 C unles otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut-Off Current I V = 230V, I = 0 - - 5.0 A CBO CB Emitter Cut-Off Current I V = 5V, I = 0 - - 5.0 A EBO EB C Collector-Emitter Breakdown Voltage V I = 50mA, I = 0 230 - - V (BR)CEO C B DC Current Gain NTE2654 h V = 5V, I = 1A 80 - 160 FE CE C NTE2664 55 - 160 Both Devices V = 5V, I = 7A 35 60 - CE C Collector-Emitter Saturation Voltage NTE2654 V I = 8A, I = 0.8A - 0.4 3.0 V CE(sat) C B NTE2664 - 1.5 3.0 V Base-Emitter Voltage V V = 5V, I = 7A - 1.0 1.5 V BE CE C Transition Frequency f V = 5V, I = 1A - 30 - MHz T CE C Collector Output Capacitance NTE2654 C V = 10V, I = 0, f = 1MHz - 200 - pF ob CB E NTE2664 - 360 - pF.615 (15.62) .190 (4.82) .787 (20.0) .591 .126 (3.22) (15.02) Dia .787 (20.0) BC E .215 (5.47)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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