NTE5534A Silicon Controlled Rectifier (SCR) 600V, 50 Amp, TO3 Isolated Square Pack Description: The NTE5534A is a general purpose SCR in a TO3 isolated high power square pack designed for use in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, and high power motor controls. Based on a clip assembly technology, the NTE5534A offers superior performance in surge current handling capabilities. Features: High Stability and Reliability High Surge Capability High On State Current Easy Mounting (Fast On Connections) Isolated Package: Insulating Voltage = 2500V RMS Absolute Maximum Ratings: (Limiting Values) RMS OnState Current (T = +75C, 180 Conduction Angle), I . . . . . . . . . . . . . . . . . . . . 50A C T(RMS) Average On State Current (T = +75C, 180 Conduction Angle), I . . . . . . . . . . . . . . . . . . . 32A C T(AV) Non Repetitive Surge Peak On State Current (T = +25C), I J TSM t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 610A t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 580A 2 2 2 I t Value for Fusing (T = +25C), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1680A s J Critical Rate of Rise On State Current, dI/dt (I = 160mA, t 100ns, F = 60Hz, T = +125C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s G r J Peak Gate Current (t = 20s, T = +125C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A p J GM Average Gate Power Dissipation (T = +125C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W J G(AV) Maximum Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GRM Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9C/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJA Rev. 410Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I V = 12V, R = 33 8 80 mA GT D L Gate Trigger Voltage V V = 12V, R = 33 1.3 V GT D L Gate NonTrigger Voltage V T = +125C, V = 600V, R = 3.3k 0.2 V GD J D L Holding Current I I = 500mA, Gate Open 150 mA H T Latching Current I I = 1.2 x I 200 mA L G GT Critical Rise of OffState Voltage dV/dt T = 125C, Gate Open, V = 402V 1000 V/s J D Peak OnState Voltage V I = 100A, t = 380s, T = 25C 1.9 V TM TM p J Threshold Voltage V T = 125C 1.0 V TO J Dynamic Resistance R T = 125C 8.5 m d J Peak Forward Blocking Current I V = 600V 10 A DRM DRM T = +125C 5 mA J Peak Reverse Blocking Current I V = 600V 10 A RRM DRM T = +125C 5 mA J 1.193 (30.3) Max .177 (4.5) Max Anode .535 (13.6) Max 1.063 (27.0) Max 38 Max 43 Max Cathode Gate .867 (22.0) Max .945 (24.0) .551 Max (14.0) Max 1.575 (40.0) Max .118 (3.0) Max