NTE5555 Silicon Controlled Rectifier (SCR) 820 Amp, TO200AB Absolute Maximum Ratings: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V , V ......................................... 600V RRM DRM DSM Non Repetitive Peak Reverse Blocking Voltage, V ................................. 700V RSM Average On State Current (Half Sine Wave), I T(AV) T = +55C (Double Side Cooled) ............................................ 735A hs RMS OnState Current (T = +25C, Double Side Cooled), I ..................... 820A hs T(RMS) Continuous On State Current (T = +25C, Double Side Cooled), I ................... 1230A hs T Peak One Cycle Surge (10ms duration, 60% V reapplied), I ................. 7600A RRM TSM (1) Non Repetitive OnState Current (10ms duration, V 10V), I ................... 8360A R TSM (2) Peak Forward Gate Current (Anode positive with respect to cathode), I ................ 20A FGM Peak Forward Gate Voltage (Anode positive with respect to cathode), V ............... 18V FGM Peak Reverse Gate Voltage, V .................................................... 5V RGM Average Gate Power, P ............................................................ 2W G Peak Gate Power (100s pulse width), P ......................................... 100W GM Rate of Rise of OffState Voltage (To 80% V gate open circuit), dv/dt ............. 200V/s DRM Rate of Rise of On State Current, di/dt (Gate drive 20V, 20 with t 1s, anode voltage 80% V ) r DRM Repetitive ............................................................ 500A/s Non Repetitive ...................................................... 1000A/s Operating Temperature Range, T ......................................... 40 to +125C hs Storage Temperature Range, T .......................................... 40 to +150C stg Thermal Resistance, Junction toHeatsink, R th(jhs) (For a device with a maximum forward voltage drop characteristic) Double Side Cooled .................................................. 0.05C/W Single Side Cooled .................................................... 0.1C/W Peak OnState Voltage (I = 1550A), V .......................................... 1.78V TM TM Forward Conduction Threshold Voltage, V .......................................... 1.03V O Forward Conduction Slope Resistance, r ......................................... 0.483m Repetitive Peak OffState Current (At V ), I ................................... 40mA DRM DRM Repetitive Peak Reverse Current (At V ), I .................................... 40mA RRM RRM Maximum Gate Current (V = 6V, I = 1A, T = +25C), I ........................... 150mA A A J GT Maximum Gate Voltage (V = 6V, I = 1A, T = +25C), V .............................. 3V A A J GT Maximum Holding Current (V = 6V, I = 1A, T = +25C), I .......................... 500mA A A J H Maximum Gate Voltage Which Will Not Trigger Any Device, V ....................... 0.25V GD Rev. 1211.190 (4.8) 25 1.650 (42.0) Dia 1.102 (28.0) .140 x .075 (3.5 x 1.8) Dia (2 Holes) .990 .012 Cathode (0.3) (25.1) Dia .590 (15.0) Gate Terminal Anode .990 (25.1) Dia
