Philips Semiconductors Product specification Octal inverting buffer (3-State) 74ABT240 FEATURES DESCRIPTION The 74ABT240 high-performance BiCMOS device combines low Octal bus interface static and dynamic power dissipation with high speed and high 3-State buffers output drive. Output capability: +64mA/32mA The 74ABT240 device is an octal inverting buffer that is ideal for driving bus lines. The device features two Output Enables (1OE, Latch-up protection exceeds 500mA per Jedec Std 17 2OE), each controlling four of the 3-State outputs. ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model Power-up 3-State Live insertion/extraction permitted QUICK REFERENCE DATA CONDITIONS SYMBOL PARAMETER TYPICAL UNIT T = 25C GND = 0V amb t Propagation delay PLH C = 50pF V = 5V 3.1 ns L CC t nAx to nYx PHL C Input capacitance V = 0V or V 4 pF IN I CC C Output capacitance Outputs disabled V = 0V or V 7 pF OUT O CC I Total supply current Outputs disabled V =5.5V 50 A CCZ CC ORDERING INFORMATION PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER 20-Pin Plastic DIP 40C to +85C 74ABT240 N 74ABT240 N SOT146-1 20-Pin plastic SO 40C to +85C 74ABT240 D 74ABT240 D SOT163-1 20-Pin Plastic SSOP Type II 40C to +85C 74ABT240 DB 74ABT240 DB SOT339-1 20-Pin Plastic TSSOP Type I 40C to +85C 74ABT240 PW 74ABT240PW DH SOT360-1 PIN DESCRIPTION PIN CONFIGURATION PIN SYMBOL NAME AND FUNCTION NUMBER 2, 4, 6, 8 1A0 1A3 Data inputs 20 1OE 1 V CC 11, 13, 15, 2A0 2A3 Data inputs 1A0 2 19 2OE 17 2Y0 3 18 1Y0 18, 16, 14, 1Y0 1Y3 Data outputs 12 1A1 4 17 2A0 9, 7, 5, 3 2Y0 2Y3 Data outputs 2Y1 5 16 1Y1 1, 19 1OE, 2OE Output enables 1A2 6 15 2A1 10 GND Ground (0V) 2Y2 7 14 1Y2 20 V Positive supply voltage CC 1A3 8 13 2A2 2Y319 12Y3 GND 10 11 2A3 SA00034 2 1996 Sep 10 8531608 17274Philips Semiconductors Product specification Octal inverting buffer (3-State) 74ABT240 LOGIC SYMBOL LOGIC SYMBOL (IEEE/IEC) 1Y0 1A0 2 18 1 EN 1Y1 1A1 4 16 1A2 1Y2 2 18 6 14 4 16 1Y3 1A3 8 12 6 14 1OE 1 8 12 2A0 2Y0 3 17 19 EN 2A1 2Y1 5 15 2Y2 2A2 7 17 13 3 15 2Y3 5 2A3 9 11 13 7 2OE 19 11 9 SA00035 SA00036 FUNCTION TABLE INPUTS OUTPUTS 1OE 1An 2OE 2An 1Yn 2Yn L L L L H H L H L H L L H X H X Z Z H = High voltage level L = Low voltage level X = Dont care Z = High impedance off state 1, 2 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS RATING UNIT V DC supply voltage 0.5 to +7.0 V CC I DC input diode current V < 0 18 mA IK I 3 V DC input voltage 1.2 to +7.0 V I I DC output diode current V < 0 50 mA OK O 3 V DC output voltage output in Off or High state 0.5 to +5.5 V OUT I DC output current output in Low state 128 mA OUT T Storage temperature range 65 to 150 C stg NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 1996 Sep 10 3