BAP70-04W,115 NXP

BAP70AM Silicon PIN diode array Rev. 4 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators Low diode capacitance Very low series inductance Low distortion 1.3 Applications RF attenuators (SAT) TV applications Car radio applications 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Graphic symbol 1 anode diode 1 2 cathode diode 2 3 anode diode 3 / cathode diode 4 4 anode diode 4 5 cathode diode 3 P 6 anode diode 2 / cathode diode 1 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BAP70AM - plastic surface-mounted package 6 leads SOT363 V BAP70AM NXP Semiconductors Silicon PIN diode array 4. Marking Table 3. Marking Type number Marking code Description BAP70AM N9* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 50 V R I forward current - 100 mA F P total power dissipation T =90 C- 300 mW tot sp T storage temperature 65 +150 C stg T junction temperature 65 +150 C j 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 260 K/W th(j-sp) to solder point BAP70AM All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 4 7 March 2014 2 of 8