BAR81... Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using /4 lines Pb-free (RoHS compliant) package BAR81W Type Package Configuration L (nH) Marking S BAR81W SOT343 single shunt-diode 0.15* BBs * series inductance chip to ground Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 30 V Diode reverse voltage V R 100 mA Forward current I F 100 mW Total power dissipation P tot T 138C s 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 120 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-06-14 1BAR81... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics - - 20 Reverse current I nA R V = 20 V R - 0.93 1 V Forward voltage V F I = 100 mA F AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz - 0.6 1 R V = 3 V, f = 1 MHz - 0.57 0.9 R - 0.7 1 Forward resistance r f I = 5 mA, f = 100 MHz F - 80 - ns Charge carrier life time rr I = 10 mA, I = 6 mA, measured at I = 3 mA, F R R R = 100 L I-region width W - 3.5 - m I 1) Shunt Insertion loss I - 30 - dB L I = 10 mA, f = 1.89 GHz F 1) Shunt isolation I - 0.7 - SO V = 3 V, f = 1.89 GHz R Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 1 For more information please refer to Application Note 049. 2011-06-14 2