BAR67... Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low forward resistance (typ. 1.5 5mA) Low harmonics Pb-free (RoHS compliant) package BAR67-02V BAR67-04 Type Package Configuration L (nH) Marking S BAR67-02V SC79 single 0.6 T BAR67-04 SOT23 series 1.8 PMs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 150 V Diode reverse voltage V R 200 mA Forward current I F mW Total power dissipation P tot T 118C, BAR67-02V 250 S 25C, BAR67-04 T 250 S Junction temperature T 150 C j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAR67-02V 115 BAR67-04 290 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-06-14 1BAR67... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 150 - - V Breakdown voltage V (BR) I = 5 A (BR) - - 20 Reverse current I nA R V = 100 V R - 0.95 1.2 V Forward voltage V F I = 50 mA F AC Characteristics pF Diode capacitance C T V = 5 V, f = 1 MHz - 0.35 0.55 R V = 0 V, f = 100 MHz - 0.35 0.9 R V = 0 V, f = 1 GHz - 0.25 - R V = 0 V, f = 1.8 GHz - 0.23 - R Reverse parallel resistance R k P V = 0 V, f = 100 MHz - 25 - R V = 0 V, f = 1 GHz - 4 - R V = 0 V, f = 1.8 GHz - 2.5 - R Forward resistance r f I = 5 mA, f = 100 MHz - 1.5 1.8 F I = 10 mA, f = 100 MHz - 1 - F - 700 - ns Charge carrier life time rr I = 10 mA, I = 6 mA, measured at I = 3 mA, F R R R = 100 L I-region width W - 13 - m I 2011-06-14 2