BAR63... Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAR63-02.. BAR63-04 BAR63-05 BAR63-06 BAR63-03W BAR63-04W BAR63-05W BAR63-06W Type Package Configuration L (nH) Marking S BAR63-02L* TSLP-2-1 single, leadless 0.4 G BAR63-02V SC79 single 0.6 G BAR63-02W SCD80 single 0.6 GG BAR63-03W SOD323 single 1.8 white G BAR63-04 SOT23 series 1.8 G4s BAR63-04W SOT323 series 1.4 G4s BAR63-05 SOT23 common cathode 1.8 G5s BAR63-05W SOT323 common cathode 1.4 G5s BAR63-06 SOT23 common anode 1.8 G6s BAR63-06W SOT323 common anode 1.4 G6s 1 *BAR63-02L is not qualified according AEC Q101 2011-07-18 1BAR63... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 100 mA Forward current I F mW Total power dissipation P tot BAR63-02L, T 118C 250 S BAR63-02V, -02W, BAR63-03W, T 115C 250 S BAR63-04...BAR63-06, T 55C 250 S BAR63-04S, T 115C 250 S BAR63-04W...BAR63-06W, T 105C 250 S 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAR63-02L 125 BAR63-02V, BAR63-02W 140 BAR63-03W 155 BAR63-04...BAR63-06 380 BAR63-04S 180 BAR63-04W...BAR63-06W 180 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - V Breakdown voltage V (BR) I = 5 A (BR) - - 10 Reverse current I nA R V = 35 V R - 0.95 1.2 V Forward voltage V F I = 100 mA F 1 For calculation of R please refer to the Technical Information thJA 2011-07-18 2