BF1100,215 NXP

BF1100 BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication Dual-gate MOS-FETs BF1100 BF1100R FEATURES and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static Superior cross-modulation performance during AGC. discharge during transport or handling. APPLICATIONS PINNING VHF and UHF applications such as television tuners and PIN SYMBOL DESCRIPTION professional communications equipment. 1 s, b source 2 d drain DESCRIPTION 3g gate 2 2 Enhancement type field-effect transistor in a plastic 4g gate 1 microminiature SOT143 or SOT143R package. The 1 transistor consists of an amplifier MOS-FET with source d d handbook, halfpage handbook, halfpage 34 43 g g 2 2 g g 1 1 1 2 2 1 s,b s,b Top view MAM124 Top view MAM125 - 1 BF1100 marking code: %MY. BF1100R marking code: %MZ. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage -- 14 V DS I drain current -- 30 mA D P total power dissipation -- 200 mW tot T operating junction temperature -- 150 C j y forward transfer admittance 24 28 33 mS fs C input capacitance at gate 1 - 2.2 2.6 pF ig1-s C reverse transfer capacitance f=1MHz - 25 35 fF rs F noise gure f = 800 MHz - 2 - dB Rev. 02 - 13 November 2007 2 of 15