BYC10-600CT,127 NXP

DISCRETE SEMICONDUCTORS DDATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification August 2018WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA Dual diode V = 600 V R Extremely fast switching Low reverse recovery current V 1.75 V A1 A2 F Low thermal resistance Reduces switching losses in K I = 10 A O(AV) sym125 associated MOSFET t = 19 ns (typ) rr APPLICATIONS PINNING SOT78 (TO220AB) mb Active power factor correction PIN DESCRIPTION Half-bridge lighting ballasts Half-bridge/ full-bridge switched 1 anode 1 mode power supplies. 2 cathode The BYC10-600CT is supplied in the SOT78 (TO220AB) 3 anode 2 conventional leaded package. tab cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Peak repetitive reverse voltage - 600 V RRM V Crest working reverse voltage - 600 V RWM V Continuous reverse voltage T 110 C - 500 V R mb I Average output current (both = 0.5 with reapplied V - 10 A O(AV) RRM(max) 1 diodes conducting) T 50 C mb I Repetitive peak forward current = 0.5 with reapplied V - 10 A FRM RRM(max) 1 per diode T 50 C mb I Non-repetitive peak forward t = 10 ms - 40 A FSM current per diode t = 8.3 ms - 44 A sinusoidal T = 150C prior to surge j with reapplied V RWM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to per diode - - 2.5 K/W th j-mb mounting base both diodes - - 2.2 K/W R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient 1 T limited by thermal runaway mb(max) August 2018 1 Rev 1.300