BYC5-600,127 NXP

DISCRETE SEMICONDUCTORS DDATA SHEET BYC5-600 Rectifier diode ultrafast, low switching loss September 2018 Product specificationWeEn Semiconductors Product specification Rectifier diode BYC5-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA Extremely fast switching V = 600 V R Low reverse recovery current Low thermal resistance V 1.75 V F k a Reduces switching losses in 001aaa020 associated MOSFET I = 5 A F(AV) t = 19 ns (typ) rr APPLICATIONS PINNING SOD59 (TO220AC) mb Active power factor correction PIN DESCRIPTION Half-bridge lighting ballasts Half-bridge/ full-bridge switched 1 cathode mode power supplies. 2 anode The BYC5-600 is supplied in the SOD59 (TO220AC) conventional tab cathode leaded package. 1 2 TO-220AC (SOD59) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Peak repetitive reverse voltage - 600 V RRM V Crest working reverse voltage - 600 V RWM V Continuous reverse voltage T 110 C - 500 V R mb I Average forward current = 0.5 with reapplied V - 5 A F(AV) RRM(max) T 89 C mb I Repetitive peak forward current = 0.5 with reapplied V - 10 A FRM RRM(max) T 89 C mb I Non-repetitive peak forward t = 10 ms - 40 A FSM current. t = 8.3 ms - 44 A sinusoidal T = 150C prior to surge j with reapplied V RWM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to - - 2.5 K/W th j-mb mounting base R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient 1 September 2018 Rev 1.500