BYC15-600,127 NXP

BYC15-600 Hyperfast power diode Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package 1.2 Features and benefits Extremely fast switching Low thermal resistance Low reverse recovery current Reduces switching loss in associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge or full-bridge Power switched-mode Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Specify Name V repetitive peak reverse --600V RRM voltage I average forward current square-wave pulse --15 A F(AV) =0.5 T 98 C mb see Figure 1 see Figure 2 Static characteristics V forward voltage I =15A T =150 C -1.4 2 V F F j see Figure 3 Dynamic characteristics t reverse recovery time I =15A V =400 V -19 - ns rr F R dI /dt = 500 A/s T =25C F j see Figure 4BYC15-600 NXP Semiconductors Hyperfast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb mb mounting base cathode 12 SOD59 (TO-220AC) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC15-600 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Specify Name V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage T 100 C DC - 500 V R mb I average forward current square-wave pulse = 0.5 T 98 C -15 A F(AV) mb see Figure 1 see Figure 2 I repetitive peak forward current square-wave pulse = 0.5 t = 25 s -30 A FRM p T 98 C mb I non-repetitive peak forward t = 10 ms sine-wave pulse T = 25 C - 200 A FSM p j(init) current t = 8.3 ms sine-wave pulse T = 25 C - 220 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYC15-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 11