BYC20X-600,127 NXP

BYC20X-600 Rectier diode, hyperfast Rev. 03 29 August 2018 Product data sheet 1. Product prole 1.1 General description Hyperfast, epitaxial rectier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features n Extremely fast switching n Low thermal resistance n Low reverse recovery current n Isolated package n Reduces switching loss in associated MOSFET 1.3 Applications n Half-bridge or full-bridge switched-mode n Continuous Current Mode (CCM) Power power supplies Factor Correction (PFC) n Half-bridge lighting ballasts 1.4 Quick reference data n V 600 V n I 20 A RRM F(AV) n V = 1.54 V (typ) n t = 19 ns (typ) F rr 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 cathode (k) k a mb 2 anode (a) 001aaa020 mb mounting base isolated 1 2 SOD113 (2-lead TO-220F)BYC20X-600 WeEn Semiconductors Rectier diode, hyperfast 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BYC20X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting hole SOD113 2-lead TO-220 full pack 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage square waveform = 1.0 T 100 C - 500 V R h I average forward current square waveform = 0.5 T 25 C - 20 A F(AV) h I repetitive peak forward current square waveform = 0.5 T 25 C -40 A FRM h t =25 s p I non-repetitive peak forward t = 10 ms sinusoidal waveform - 250 A FSM current t = 8.3 ms sinusoidal waveform - 274 A T storage temperature -40 +150 C stg T junction temperature - 150 C j BYC20X-600 3 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 August 2018 2 of 9