BYC10DX-600 NXP

BYC10DX-600 Hyperfast power diode Rev. 1 30 June 2011 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits Isolated plastic package Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse --600V RRM voltage I average forward current square-wave pulse --10 A F(AV) =0.5 T =41C h see Figure 1 see Figure 2 Static characteristics V forward voltage I =10A T =25C -2 2.5 V F F j see Figure 5 I =10A T =150 C -1.4 1.8 V F j see Figure 5 Dynamic characteristics reverse recovery time I =10A V = 400 V -18 -ns t rr F R dI /dt = 500 A/s F T =25C see Figure 6 j TO-220FBYC10DX-600 NXP Semiconductors Hyperfast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC10DX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac BYC10DX-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 30 June 2011 2 of 12