NXH3670UK/A1Z NXP

NxH3670UK Ultra-low power 2.4 GHz Bluetooth Low Energy transceiver for audio streaming Rev. 3.3 13 November 2020 Product data sheet 1 General description The NXH3670UK constitutes a highly integrated, single chip ultra-low power 2.4 GHz wireless transceiver with embedded MCU, targeted at wireless audio streaming for hearables, wireless headsets, and headphones. The NXH3670UK chip integrates the following key functionalities among others: A 2.4 GHz RF transceiver and digital modem supporting up to 2 Mbits/s Supporting Bluetooth Low Energy GFSK modulation 1 Mbps and 2 Mbps A low-power 16 MHz/32 MHz crystal oscillator and on-chip oscillators An RF MAC for supporting the lower protocol layers A Cortex-M0 subsystem for system control and higher protocol layers An AES-128 security coprocessor Audio interfaces and audio processing accelerators A CoolFlux DSP for audio processing Multiple user interfaces for control, data, debug, and test CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. CAUTION Semiconductors are light sensitive. Exposure to light sources can cause the IC to malfunction. The IC must be protected against light. The protection must be applied to all sides of the IC.. Unless otherwise specified: Typical values are at room temperature (25 C) with nominal supply voltages of 1.2 V. Minimum/Maximum values are valid over operating temperature and voltage range as specified in Table 26.NXP Semiconductors NxH3670UK Ultra-low power 2.4 GHz Bluetooth Low Energy transceiver for audio streaming 2 Features and benefits Transceiver characteristics 2.402 GHz to 2.480 GHz carrier frequency Bluetooth Low Energy 1 Mbps and 2 Mbps PHY modes 2 MHz channels in 1 Mbps and 2 Mbps modes Receiver characteristics: Sensitivity 90 dBm in Bluetooth Low Energy 2 Mbps modulation mode Sensitivity 94 dBm in Bluetooth Low Energy 1 Mbps modulation mode Frequency offset correction up to 300 kHz. RSSI measurement with 3 dB accuracy Transmitter characteristics: Programmable TX output power of 10 dBm to +4 dBm in steps of 2 dBm Synthesizer characteristics: Fully integrated PLL, no external loop filter components Integrated power management: Low voltage supply 1.2 V Integrated supply generation for sensitive radio blocks Integrated supply generation for digital and memories Flexible low-power states Clock generation: Integrated low-power crystal oscillator Support for 16 MHz or 32 MHz crystals with 60 ppm accuracy and crystal trimming On chip oscillators, including ultra low-power oscillator Low current consumption: Sleep current < 63 A Continuous RX current < 3.7 mA at 1.2 V Continuous TX current < 7.3 mA at 1.2 V (0 dBm output power) MCU subsystem: ARM Cortex-M0 up to 16 MHz in low-power mode and 84 MHz in high-performance mode Flexible DMA engine Serial debug interface Control/Data interfaces: SPI slave UART GPIOs RF MAC: Dedicated RF MAC accelerator AES security coprocessor Packet processing Timers CRC, whitening NXH3670UK All information provided in this document is subject to legal disclaimers. NXP B.V. 2020. All rights reserved. Product data sheet Rev. 3.3 13 November 2020 2 / 45