PSMN3R3-60PL NXP

PSMN3R3-60PL N-channel 60 V, 3.4 m logic level MOSFET in SOT78 7 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 130 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 293 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.7 3.4 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge V = 10 V I = 25 A V = 48 V - 175 - nC G(tot) GS D DS Fig. 13 Fig. 14 Q gate-drain charge - 31 - nC GD Avalanche ruggedness E non-repetitive drain- I = 130 A V 60 V R = 50 - - 372 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 3 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN3R3-60PL N-channel 60 V, 3.4 m logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-60PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN3R3-60PL PSMN3R3-60PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 25 C V = 10 V Fig. 1 1 - 130 A D mb GS T = 100 C V = 10 V Fig. 1 1 - 130 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 793 A DM mb p PSMN3R3-60PL All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 7 February 2013 2 / 13