PSMN6R3-120ESQ NXP

PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive I2PAK package for slimline adaptors & height constrained applications 3. Applications AC-to-DC power supply Synchronous rectification Motor control Slimline adaptors & chargers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4 5.7 6.7 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 61.9 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 207.1 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 532 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3Nexperia PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R3-120ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb P total power dissipation T = 25 C Fig. 2 - 405 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T = 25 C - 70 A S mb I peak source current pulsed t 10 s T = 25 C - 280 A SM p mb PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 12