Photomicrosensor (Reflective) EE-SY110 Be sure to read Precautions on page 24. Dimensions Features Compact reflective model with a molded housing. Note: All units are in millimeters unless otherwise indicated. Recommended sensing distance = 5.0 mm Absolute Maximum Ratings (Ta = 25C) Four, 0.5 Item Symbol Rated value +0.2 - 0.3 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A Four, R1.5 FP rent (see note 2) Reverse voltage V 4 V R 15.20.2 Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW Four, 0.25 C tion (see note 1) 15 to 18 Ambient tem- Operating Topr 40C to 85C perature Storage Tstg 40C to 85C Soldering temperature Tsol 260C Internal Circuit (see note 3) A C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. ature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of K E Dimensions Tolerance 100 Hz. 3. Complete soldering within 10 seconds. 3 mm max. 0.2 Terminal No. Name 3 < mm 6 0.24 A Anode 6 < mm 10 0.29 K Cathode 10 < mm 18 0.35 C Collector E Emitter 18 < mm 30 0.42 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 200 A min., 2,000 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 170 EE-SY110 Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% d = 5 mm Ta = 25C V = 10 V CE d = 5 mm I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (C) Forward current I (mA) F CollectorEmitter voltage V (V) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V CE I = 20 mA F Ta = 25C 0 x V = 5 V CE Load resistance R (k) L Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics V = 10 V CE (Typical) (Typical) (Typical) I = 20 mA F d = 5 mm Sensing object: Ta = 25C I = 20 mA F White paper I = 20 mA F V = 10 V CE with a reflection V = 10 V CE Ta = 25C factor of 90% d = 5 mm 1 Sensing object: White paper with a reflection factor of 90% Sensing object: White paper with a reflection factor of 90% d Direction Distance d (mm) Distance d (mm) Angle deviation () 2 Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY110 Photomicrosensor (Reflective) 171 Light current I (A) L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Dark current I (nA) Light current I (mA) D L Relative light current I (%) L Relative light current I (%) Response time tr, tf (s) L Light current I (mA) L