Photomicrosensor (Reflective) EE-SY169 Be sure to read Precautions on page 25. Dimensions Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of 0.6 mm horizon- tally and vertically. With a red LED sensing dyestuff-type inks. Limited reflective model. For lesser LED forward current the EE-SY169B would be a better choice. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 40 mA F Surface A (see note 1) Two, C0.2 Pulse forward cur- I 300 mA FP 10.1 dia. 10.1 dia. rent (see note 2) Reverse voltage V 3 V (see note) R (see note) Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C Note: These dimensions are for tion (see note 1) Internal Circuit the surface A. Other lead Ambient tem- Operating Topr 0C to 70C wire pitch dimensions are for A C perature Storage Tstg 20C to 80C the housing surface. Soldering temperature Tsol 260C Unless otherwise specified, the (see note 3) tolerances are as shown below. K E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. 3 mm max. 0.3 Terminal No. Name 2. The pulse width is 10 s maximum with a frequency of 3 < mm 6 0.375 A Anode 100 Hz. 6 < mm 10 0.45 K Cathode 3. Complete soldering within 10 seconds. 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.85 V typ., 2.3 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 3 V R R Peak emission wavelength 660 nm typ. I = 20 mA P F Detector Light current I 160 A min., 2,000 A max. I = 20 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 5 V with no reflection LEAK F CE CollectorEmitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity wave- 850 nm typ. V = 5 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 154 EE-SY169 Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25C d = 4 mm Sensing object: White I = 40 mA F d = 4 mm paper with a reflection V = 5 V CE factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F I = 5 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25C 0lx V = 5 V CE Ambient temperature Ta (C) Ambient temperature Ta (C) Load resistance R (k) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA Ta = 25C F V = 5 V CE V = 5 V CE I = 20 mA F Ta = 25C Ta = 25C V = 10 V CE d = 4 mm Sensing object: 1 White paper with Sensing object: Sensing object: White a reflection factor White paper with a paper with a reflection of 90% reflection factor of factor of 90% d1 = 3.5 mm 90% d1 = 4.0 mm Sensing d1 = 4.5 mm d = 0 object Direction Sen- Direction sor Sen- sor Distance d (mm) Distance d (mm) Distance d (mm) 2 2 Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Ta = 25 Ta = 25C d = 3 mm I = 20 mA V F CE d = 4 mm = 10 V I = 20 mA Input F d = 5 mm Sensing object: V = 10 V CE White paper with 90 % a reflection fac d = 3 mm Output tor of 90% d = 4 mm 10 % d = 5 mm Input Output Sensing object: White paper with a reflection factor of 90% Angle deviation () Angle deviation () EE-SY169 Photomicrosensor (Reflective) 155 Light current I (A) Relative light current I (%) L L Forward current I (mA) Relative light current I (%) F L Collector dissipation Pc (mW) Dark Current I (nA) D Light current I (A) Relative light current I (%) L L Relative light current I (%) L Light current I (A) Response time tr, tf (s) L Relative light current I (%) L