EE-SY199 Photomicrosensor (Reflective) Dimensions Features (Unit: mm) Ultra-compact model. (0.7) PCB surface mounting type. Center of receiver element 1.7 (0.55) (0.7) (0.65) (0.63) 2.7 Absolute Maximum Ratings Center of emitter element 3.2 (Ta=25C) Recommended Soldering Pattern 2-1 2-1.7 2-1 Item Symbol Rated value Unit Resin part of light shielding module *1 Forward current IF 50 mA Emitter 1.1 Reverse voltage VR 6 V 2-0.65 2-0.45 Collector-Emitter 0.4 VCEO 35 V voltage 2-0.65 Note 1. The shaded portion in the (1.8) Emitter-Collector VECO 6 V above figure may cause short- voltage E K Detector ing. Do not wire in this portion. (0.57) Collector current IC 20 mA 2. The dimensional tolerance for (0.57) the recommended soldering Collector dissipa- *1 PC 75 mW C A pattern is 0.1 mm. tion Direction pattern (NC) *1 Total allowable loss Ptot 100 mW Operating temperature Topr 25 to 85 C Internal Circuit Terminal No. Name Storage temperature Tstg 40 to 100 C A Anode C A *2 Soldering temperature Tsol 260 C K Cathode C Collector *1. Refer to the temperature rating chart if the ambient tem- E K E Emitter perature exceeds 25C. Unless otherwise specified, the *2. Complete soldering within 5 seconds. dimensional tolerance is 0.15 mm. For reflow soldering, use the conditions given on page 4. Electrical and Optical Characteristics (Ta=25C) Value Item Symbol Unit Condition MIN. TYP. MAX. Forward current VF --- 1.2 1.4 V IF = 20mA VR = 6V Emitter Reverse voltage I R --- --- 10 A Peak emission wave- P --- 950 --- nm --- length IF = 4 mA, VCE = 2V, Aluminum-de- Light current I L 40 85 130 A posited surface, d = 1 mm* Dark current I D --- 1 100 nA VCE = 20V, 0lx IF = 4mA, VCE = 2V, Detector Leakage current I LEAK --- --- 500 nA with no reflection Collector-Emitter satu- VCE (sat) --- --- --- V --- rated voltage Peak spectral sensitivi- P --- 930 --- nm --- ty wavelength VCC = 2 V, RL = 1 k , Rising time t r --- 20 100 A IL = 100 A, d = 1 mm* VCC = 2 V, RL = 1 k , Falling time t f --- 20 100 A IL = 100 A, d = 1 mm* * Refer to Fig 12. Light Current Measurement Setup Diagram on page 2. 1EE-SY199 Engineering Data Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Voltage Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Characteristics (Typical) Characteristics (Typical) 120 700 Ta=25C Ta=75C VCE=2 V Ptot 600 50C 100 25C 100 500 0C 80 PC 25C 400 60 IF 300 10 40 200 20 100 1 0 0 0 0.5 11.5 22.5 3 -40 -20 0 20 40 60 80 100 0 510 15 20 Forward voltage V (V) Ambient temperature Ta (C) F Forward current I (mA) F Fig 4. Light Current vs. Collector-Emitter Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) Temperature Characteristics (Typical) -6 600 120 10 Ta=25C VCE=20 V IF=4 mA IF=15 mA VCE=2 V 500 100 -7 10 400 80 10 mA 300 -8 60 10 200 40 7 mA -9 10 4 mA 100 20 2 mA -10 0 0 10 0 2468 10 -25 025 50 75 025 50 75 100 Collector-Emitter voltage V (V) Ambient temperature Ta (C) CE Ambient temperature Ta (C) Fig 9. Relative Light Current vs. Card Fig 7. Response Time vs. Load Resistance Fig 8. Relative Light Current vs. Distance Moving Distance Characteristics Characteristics (Typical) Characteristics (Typical) (Typical) 1,000 100 100 Ta=25C Aluminum-deposited surface Ta=25C IC=100 A White Black 90 IF=4 mA VCE=2 V d d VCE=2 V 80 80 tr L 70 100 tf 60 60 IF=4 mA 50 VCE=2 V d=1 mm 40 40 td 10 30 20 20 ts 10 1 0 0 0.1 1 10 100 1,000 0 0.5 1 1.523452.5 3.5 4.5 -6 -5 -4 -3 -2 -1 0 1 2 3 Load resistance R (k ) Distance d (mm) Card moving distance L (mm) L Fig 10. Relative Light Current vs. Card Moving Fig 11. Response Time Measurement Fig 12. Light Current Measurement Setup Distance Characteristics (Typical) Circuit Diagram Input 100 0 White Black t d Output 90% 80 0 10% L t t d t s Aluminum-deposited surface 60 t r t f IF=4 mA VCE=2 V IL Input d=1 mm VCC Glass d 40 Output 20 RL 0 -6 -5 -4 -3 -2 -1 0 1 2 3 Card moving distance L (mm) 2 Response time t (A) Forward current I (mA) r F Light current I ( A) Relative light current I (%) L L Allowable loss P P (mW) C tot Relative light current I (%) Relative light current I (%) Forward current I (mA) L L F Dark current I (A) D Forward current I ( A) Relative light current I (%) L L