X-On Electronics has gained recognition as a prominent supplier of EE-SY113 Optical Switches, Reflective, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. EE-SY113 Optical Switches, Reflective, Phototransistor Output are a product manufactured by Omron. We provide cost-effective solutions for Optical Switches, Reflective, Phototransistor Output, ensuring timely deliveries around the world.

EE-SY113 Omron

EE-SY113 electronic component of Omron
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Part No.EE-SY113
Manufacturer: Omron
Category: Optical Switches, Reflective, Phototransistor Output
Description: Optical Switches, Reflective, Phototransistor Output REFL PHOTO MICROSENSOR NON-AMP
Datasheet: EE-SY113 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.588 ea
Line Total: USD 5.59 
Availability - 106
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.588
10 : USD 4.158
20 : USD 3.894
50 : USD 3.729
100 : USD 3.256
200 : USD 3.113
600 : USD 3.08
1000 : USD 3.047
2000 : USD 3.014

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Distance
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Vf - Forward Voltage
Vr - Reverse Voltage
Height
Length
Output Type
Sensing Method
Wavelength
Width
Brand
Number Of Channels
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EE-SY113 from our Optical Switches, Reflective, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EE-SY113 and other electronic components in the Optical Switches, Reflective, Phototransistor Output category and beyond.

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Photomicrosensor (Reflective) EE-SY113 Be sure to read Precautions on page 24. Dimensions Features Compact reflective Photomicrosensor (EE-SY110) with a molded Note: All units are in millimeters unless otherwise indicated. housing and a dust-tight cover. Recommended sensing distance = 4.4 mm Four, 0.5 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Notch for directional discrimination Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V 2.5 R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- Four, 0.25 ECO voltage 15 to 18 Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 40C to 80C Internal Circuit perature Storage Tstg 40C to 85C A C Unless otherwise specified, the Soldering temperature Tsol 260C tolerances are as shown below. (see note 3) K E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. 3 mm max. 0.3 Terminal No. Name 2. The pulse width is 10 s maximum with a frequency of 3 < mm 6 0.375 100 Hz. A Anode 6 < mm 10 0.45 3. Complete soldering within 10 seconds. K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 160 A min., 1,600 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SY113 Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) d = 4.4 mm Sensing object: White V = 10 V CE I = 40 mA F paper with a reflection d = 4.4 mm factor of 90% Sensing object: White paper with a reflection factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25C 0 x V = 5 V CE Ambient temperature Ta (C) Ambient temperature Ta (C) Load resistance R (k) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics (Typical) (Typical) (Typical) Ta = 25C I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25C Sensing object: White paper d = 4.4 mm 1 with a reflection factor of 90% Sensing object: White paper with a reflection factor of 90% Ta = 25C V = 10 V CE I = 20 mA F d = 4.4 mm d 1 Sensing object: White paper with a reflection factor of 90% Direction d 2 Angle deviation () Distance d (mm) Distance d (mm) 2 Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY113 Photomicrosensor (Reflective) 167 Light current I (A) Relative light current I (%) Forward current I (mA) L L F Collector dissipation Pc (mW) Dark current I (nA) Relative light current I (%) D L Light current I (A) L Relative light current I (%) Response time tr, tf (s) L Light current I (mA) L

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Omron Automation
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Omron Automation and Safety
OMRON AUTOMATION CANADA
OMRON ELECTRONIC COM
OMRON ELECTRONIC COMPONENTS
OMRON ELECTRONICS
Omron Electronics In
Omron Electronics Inc-EMC Div
Omron Electronics Inc-IA Div
OMRON INDUSTRIAL
OMRON INDUSTRIAL AUTOMATION
Omron Industrial Products
OMRON OCB
OMRON SAFETY
OMRON STI
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