Photomicrosensor (Reflective) EE-SY193 Ultra-compact SMD Type with a detectable sensing distance of 1 mm PCB surface mounting type. Be sure to read Safety Precautions on page 3. RoHS Compliant Model Number Structure EE-S Y 1 93 (1) (2) (3) (4) (1) (2) (3) (4) Photomicrosensor Reflective Phototransistor output Serial number Ordering Information Photomicrosensor Minimum Sensing Connecting Appearance Sensing distance Output type Model packing unit method method (Unit: pcs)/ 3.35 Reflective SMT 1 mm Phototransistor EE-SY193 * 3,000 * 0.95 2.65 * Types with 100 pcs/box re available. The model name for ordering is EE-SY193-1. Note: Order in multiples of minimum packing unit. Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Value Sym Item Unit Condition bol Emitter MIN. TYP. MAX. 1 Forward current IF 25 * mA Forward voltage VF --- 1.1 1.3 V IF = 4 mA 2 Pulse forward current IFP 100 * A Reverse current IR --- --- 10 AVR = 6 V Emitter Reverse voltage VR 6V Peak emission P --- 940 --- nm IF = 20 mA wavelength Detector Aluminum Collector-Emitter voltage VCEO 18 V deposited Emitter-Collector voltage VECO 4V surface, Light current IL 100 150 360 A IF = 4 mA, Collector current IC 20 mA VCE = 2 V, 1 Collector dissipation PC 75 * mW d = 1 mm * Ambient temperature VCE = 10 Dark current ID --- --- 100 nA Operating Topr 30 to 80 C V,0 lx Detector Storage Tstg 40 to 85 C IF = 4 mA, Leakage current ILEAK --- --- 1 A 3 VCE = 2 V Reflow soldering Tsol 220 * C 3 Collector-Emitter VCE Manual soldering Tsol 300 * C --- --- --- --- --- saturated voltage (sat) *1. Refer to the temperature rating chart if the ambient temperature Peak spectral exceeds 25C. sensitivity P --- 900 --- nm --- *2. Duty: 1/100 Pulse width: 0.1 ms wavelength *3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. VCC = 2 V, Rising time tr --- 25 --- s RL = 1 k, Exterior Specifications VCC = 2 V, Falling time tf --- 30 --- s RL = 1 k, Material Connecting method Weight (g) * The letter d indicates the distance between the top surface of the Mold sensor and the sensing object. SMT 0.014 LCP 1EE-SY193 Engineering Data Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 120 60 120 1,600 Ta = 25 Ta = 25 VCE = 2V 1,400 100 100 d = 1mm 50 1,200 Pc 80 40 80 1,000 60 60 30 800 IF Aluminum deposited 600 surface 40 40 20 400 20 10 20 200 Glass Sensor d = 1 mm 0 0 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 25 30 -40 -20 0 20 40 60 80 100 Forward current IF (mA) Forward current IF (mA) Ambient temperature Ta (C) Fig 4. Light Current vs. Collector-Emitter Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Temperature Voltage Characteristics (Typical) Temperature Characteristics (Typical) Characteristics (Typical) 10,000 700 120 Ta = 25 VCE = 2 V Aluminum deposited surface IF = 4 mA 115 600 d = 1 mm 100 110 500 Glass Sensor 105 IF = 10 mA d = 1 400 10 100 300 95 200 I =4mA F 1 90 100 85 0.1 0 80 02 4 6 8 10 12 14 -60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 CollectorEmitter voltage VCE (V) Ambient temperature Ta (C) Ambient temperature Ta (C) Fig 7. Response Time vs. Load Resistance Fig 8. Sensing Distance Characteristics Fig 9. Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) 1,000 120 120 Aluminum deposited Ta = 25 C Aluminum deposited surface surface L 100 100 tr 80 80 1 mm d Sensor 100 60 tf 60 40 40 20 20 10 0 0 1 10 100 -1.2 -0.6 0 0.6 1.2 0 1 2 3 Load resistance RL (k) Distance d (mm) Distance d (mm) Fig 10. Response Time Measurement Circuit Input 0 t Output 90 % 0 10 % t tr tf IL Input Vcc Output RL 2 Response time tr, tf (s) Light current IL (mA) Forward current IF (mA) Collector dissipation Pc (mW) Relative light current IL (%) Light current IL (A) Relative light current IL (%) Dark current ID (nA) Light current IL (mA) Relative light current IL (%)