1N5352B/LOOSE ON Semiconductor

1N53 Series 5 Watt Surmetic 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All this in an axial lead, 1N53 Series ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 1.2 V Max I = 1.0 A for all types) F F I F Symbol Parameter V Reverse Zener Voltage I Z ZT I Reverse Current ZT Z Maximum Zener Impedance I ZT ZT V V V Z R I Reverse Current ZK I V R F I ZT Z Maximum Zener Impedance I ZK ZK I Reverse Leakage Current V R R V Breakdown Voltage R I Forward Current F V Forward Voltage I F F Zener Voltage Regulator I Maximum Surge Current T = 25C R A V Reverse Zener Voltage Change Z I Maximum DC Zener Current ZM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.2 V Max I = 1.0 A for all types) A F F Leakage Zener Voltage (Note 3) Zener Impedance (Note 3) Current I V I R Z ZM V (Volts) I Z I Z I I I V (Note 4) (Note 5) (Note 6) Z ZT ZT ZT ZK ZK ZK R R Device Device (Note 2) Marking Min Nom Max mA mA A Max Volts A Volts mA 1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440 1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100 1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010 1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865 1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790 1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700 1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520 1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of 5%. 3. ZENER VOLTAGE (V ) and IMPEDANCE (I and I ): Test conditions for zener voltage and impedance are as follows: I is applied Z ZT ZK Z 40 10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (T = 25C +8C, 2C). A 4. SURGE CURRENT (I ): Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, R PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (T = 25C +8C, 2C). A 5. VOLTAGE REGULATION ( V ): The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50% Z Z of the I max value listed in the electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting Z Z contact located as specified in Note 2 (T = 25C +8C, 2C). A 6. MAXIMUM REGULATOR CURRENT (I ): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, ZM it applies only to the Bsuffix device. The actual I for any device may not exceed the value of 5 watts divided by the actual V of the device. ZM Z T = 25C at 3/8 maximum from the device body. L The G suffix indicates PbFree package or PbFree packages are available.