TIP31A / TIP31C NPN Epitaxial Silicon Transistor November 2014 TIP31A / TIP31C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complementary to TIP32 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP31A TIP31A TO-220 3L (Single Gauge) Bulk TIP31C TIP31C TO-220 3L (Single Gauge) Bulk TIP31CTU TIP31C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP31A 60 V Collector-Base Voltage V CBO TIP31C 100 TIP31A 60 V Collector-Emitter Voltage V CEO TIP31C 100 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 5 A CP I Base Current 1 A B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP31A / TIP31C Rev. 1.1.0 TIP31A / TIP31C NPN Epitaxial Silicon Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 2 A P W C Collector Dissipation (T = 25C) 40 C Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Max. Unit TIP31A 60 Collector-Emitter Sustaining V (sus) I = 30 mA, I = 0 V CEO (1) C B Voltage TIP31C 100 TIP31A V = 30 V, I =00.3 CE B I Collector Cut-Off Current mA CEO TIP31C V = 60 V, I =00.3 CE B TIP31A V = 60 V, V = 0 200 CE EB I Collector Cut-Off Current A CES TIP31C V = 100 V, V = 0 200 CE EB I Emitter Cut-Off Current V = 5 V, I = 0 1 mA EBO EB C V = 4 V, I = 1 A 25 CE C (1) h DC Current Gain FE V = 4 V, I = 3 A 10 50 CE C (1) V (sat) Collector-Emitter Saturation Voltage I = 3 A, I = 375 mA 1.2 V CE C B (1) V (on) Base-Emitter On Voltage V = 4 V, I = 3 A 1.8 V BE CE C V = 10 V, I = 500 mA, CE C f Current Gain Bandwidth Product 3.0 MHz T f = 1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP31A / TIP31C Rev. 1.1.0 2