2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features www.onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE I = 3.75 Adc V = 40 Vdc 2N3771 S/b CE = 2.5 Adc V = 60 Vdc 2N3772 POWER TRANSISTORS CE These Devices are PbFree and are RoHS Compliant NPN SILICON 40 and 60 VOLTS, 150 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol 2N3771 2N3772 Unit MARKING CollectorEmitter Voltage V 40 60 Vdc CEO DIAGRAM CollectorEmitter Voltage V 50 80 Vdc CEX CollectorBase Voltage V 50 100 Vdc CB EmitterBase Voltage V 5.0 7.0 Vdc EB Collector Current Continuous I 30 20 Adc C 2N377xG Peak 30 30 AYYWW MEX TO204AA (TO3) Base Current Continuous I 7.5 5.0 Adc B CASE 107 Peak 15 15 STYLE 1 Total Device Dissipation T = 25C P 150 W C D Derate above 25C 0.855 W/C Operating and Storage Junction T , T 65 to +200 C 2N377x = Device Code J stg Temperature Range x = 1 or 2 G=PbFree Package THERMAL CHARACTERISTICS A = Assembly Location YY = Year Characteristic Symbol Max Unit WW = Work Week Thermal Resistance, 1.17 C/W JC MEX = Country of Origin JunctiontoCase Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Shipping Device Package 1. Indicates JEDEC registered data. 2N3771G TO204 100 Units / Tray (PbFree) 2N3772G TO204 100 Units / Tray (PbFree) Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2019 Rev. 12 2N3771/D2N3771, 2N3772 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2 and 3) 2N3771 V 40 Vdc CEO(sus) (I = 0.2 Adc, I = 0) 2N3772 60 C B CollectorEmitter Sustaining Voltage 2N3771 V 50 Vdc CEX(sus) (I = 0.2 Adc, V = 1.5 Vdc, R = 100 ) 2N3772 80 C EB(off) BE CollectorEmitter Sustaining Voltage 2N3771 V 45 Vdc CER(sus) (I = 0.2 Adc, R = 100 ) 2N3772 70 C BE Collector Cutoff Current (Note 2) I mAdc CEO (V = 30 Vdc, I = 0) 2N3771 CE B 10 (V = 50 Vdc, I = 0) 2N3772 CE B 10 (V = 25 Vdc, I = 0) CE B Collector Cutoff Current (Note 2) I mAdc CEV (V = 50 Vdc, V = 1.5 Vdc) 2N3771 CE EB(off) 2.0 (V = 100 Vdc, V = 1.5 Vdc) 2N3772 CE EB(off) 5.0 (V = 45 Vdc, V = 1.5 Vdc) 2N6257 CE EB(off) 4.0 (V = 30 Vdc, V = 1.5 Vdc, T = 150 C) 2N3771 CE EB(off) C 10 2N3772 10 (V = 45 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C Collector Cutoff Current (Note 2) I mAdc CBO (V = 50 Vdc, I = 0) 2N3771 CB E 2.0 (V = 100 Vdc, I = 0) 2N3772 CB E 5.0 Emitter Cutoff Current (Note 2) I mAdc EBO (V = 5.0 Vdc, I = 0) 2N3771 BE C 5.0 (V = 7.0 Vdc, I = 0) 2N3772 BE C 5.0 ON CHARACTERISTICS (Note 2) DC Current Gain (Note 3) h FE (I = 15 Adc, V = 4.0 Vdc) 2N3771 C CE 15 60 (I = 10 Adc, V = 4.0 Vdc) 2N3772 C CE 15 60 (I = 8.0 Adc, V = 4.0 Vdc) C CE (I = 30 Adc, V = 4.0 Vdc) 2N3771 C CE 5.0 (I = 20 Adc, V = 4.0 Vdc) 2N3772 C CE 5.0 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 15 Adc, I = 1.5 Adc) 2N3771 C B 2.0 (I = 10 Adc, I = 1.0 Adc) 2N3772 C B 1.4 (I = 30 Adc, I = 6.0 Adc) 2N3771 C B 4.0 (I = 20 Adc, I = 4.0 Adc) 2N3772 C B 4.0 BaseEmitter On Voltage V Vdc BE(on) (I = 15 Adc, V = 4.0 Vdc) 2N3771 C CE 2.7 (I = 10 Adc, V = 4.0 Vdc) 2N3772 C CE 2.2 (I = 8.0 Adc, V = 4.0 Vdc) C CE *DYNAMIC CHARACTERISTICS (Note 2) CurrentGain Bandwidth Product f 0.2 MHz T (I = 1.0 Adc, V = 4.0 Vdc, f = 50 kHz) C CE test SmallSignal Current Gain h 40 fe (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) C CE SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non repetitive) I Adc S/b (V = 40 Vdc) 2N3771 CE 3.75 (V = 60 Vdc) 2N3772 CE 2.5 2. Indicates JEDEC registered data. 3. Pulse Test: 300 s, Rep. Rate 60 cps. www.onsemi.com 2