2N3904RLRA ON Semiconductor

2N3903, 2N3904 General Purpose Transistors NPN Silicon Features 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 2) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO V 6.0 Vdc Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 0.1 mAdc, V = 1.0 Vdc) 2N3903 20 C CE 2N3904 40 (I = 1.0 mAdc, V = 1.0 Vdc) 2N3903 35 C CE 2N3904 70 (I = 10 mAdc, V = 1.0 Vdc) 2N3903 50 150 C CE 2N3904 100 300 (I = 50 mAdc, V = 1.0 Vdc) 2N3903 30 C CE 2N3904 60 (I = 100 mAdc, V = 1.0 Vdc) 2N3903 15 C CE 2N3904 30 Collector Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc 0.3 C B Base Emitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N3903 250 C CE 2N3904 300 Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0 C CE 2N3904 1.0 10 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0 C CE 2N3904 0.5 8.0 SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 50 200 C CE 2N3904 100 400 Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 40 mhos C CE oe Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 2N3903 6.0 C CE S 2N3904 5.0 SWITCHING CHARACTERISTICS Delay Time t 35 ns d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 ns r Storage Time (V = 3.0 Vdc, I = 10 mAdc, 2N3903 t 175 ns CC C s I = I = 1.0 mAdc) 2N3904 200 B1 B2 Fall Time t 50 ns f 2. Pulse Test: Pulse Width 300 s Duty Cycle 2%.