2N4123, 2N4124 General Purpose Transistors NPN Silicon 2N4123, 2N4124 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N4123 30 C E 2N4124 25 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 2N4123 40 C E 2N4124 30 Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector Cutoff Current I nAdc CBO (V = 20 Vdc, I = 0) 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 2.0 mAdc, V = 1.0 Vdc) 2N4123 50 150 C CE 2N4124 120 360 (I = 50 mAdc, V = 1.0 Vdc) 2N4123 25 C CE 2N4124 60 Collector Emitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B Base Emitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N4123 250 C CE 2N4124 300 Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C CollectorBase Capacitance C pF cb (I = 0, V = 5.0 V, f = 1.0 MHz) 4.0 E CB SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 10 Vdc, R = 10 k , f = 1.0 kHz) 2N4123 50 200 C CE S 2N4124 120 480 Current Gain High Frequency h fe (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N4123 2.5 C CE 2N4124 3.0 (I = 2.0 mAdc, V = 10 V, f = 1.0 kHz) 2N4123 50 200 C CE (I = 2.0 mAdc, V = 10 V, f = 1.0 kHz) 2N4124 120 480 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 2N4123 6.0 C CE S 2N4124 5.0 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.