2N4124 / MMBT4124 2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4124 *MMBT4124 P Total Device Dissipation 625 350 mW D Derate above 25 C 5.0 2.8 mW/ C Thermal Resistance, Junction to Case 83.3 R C/W JC R Thermal Resistance, Junction to Ambient 200 357 C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 2001 Fairchild Semiconductor Corporation 2N4124/MMBT4124, Rev A2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 25 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 A, I = 0 30 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO C C I Collector Cutoff Current V = 20 V, I = 0 50 nA CBO CB E I Emitter Cutoff Current V = 3.0 V, I = 0 50 nA EBO EB C ON CHARACTERISTICS* h DC Current Gain I = 2.0 mA, V = 1.0 V 120 360 FE C CE I = 50 mA, V = 1.0 V 60 C CE Collector-Emitter Saturation Voltage I = 50 mA, I = 5.0 mA 0.3 V V C B CE(sat) V Base-Emitter Saturation Voltage I = 50 mA, I = 5.0 mA 0.95 V C B BE(sat) SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product I = 10 mA, V = 20 V, 300 MHz T C CE f = 100 MHz C Output Capacitance V = 5.0 V, I = 0, 4.0 pF CB E obo f = 100 kHz Input Capacitance V = 0.5 V, I = 0, 8.0 pF C BE C ibo f = 1.0 kHz C Collector-Base Capcitance V = 5.0 V, I = 0, 4.0 pF CB E cb f = 100 kHz Small-Signal Current Gain V = 10 V, I = 2.0 mA, 120 480 h CE C fe f = 1.0 kHz NF Noise Figure I = 100 A, V = 5.0 V, 5.0 dB C CE R =1.0k , f=10 Hz to 15.7 kHz S *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%