2N4402 2N4402 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 600 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4402 P Total Device Dissipation 625 mW D 5.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC Thermal Resistance, Junction to Ambient 200 C/W RJA 2001 Fairchild Semiconductor Corporation 2N4402, Rev A2N4402 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage 5.0 V (BR)EBO I = 100 A, I = 0 E C I Collector Cutoff Current V = 35 V, V = 0.4 V 0.1 A CEX CE EB I Base Cutoff Current V = 35 V, V = 0.4 V 0.1 A BL CE EB ON CHARACTERISTICS* h DC Current Gain V = 1.0 V, I = 1.0 mA 30 FE CE C V = 1.0 V, I = 10 mA 50 CE C V = 2.0 V, I = 150 mA 50 150 CE C 20 VCE = 2.0 V, IC = 500 mA 0.40 V V Collector-Emitter Saturation Voltage I = 150 mA, I = 15 mA CE(sat) C B I = 500 mA, I = 50 mA 0.75 V C B Base-Emitter Saturation Voltage I = 150 mA, I = 15 mA 0.75 0.95 V V C B BE(sat) IC = 500 mA, IB = 50 mA 1.30 V SMALL SIGNAL CHARACTERISTICS Output Capacitance V = 10 V, f = 140 kHz 8.5 pF C CB ob C Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF ib Small-Signal Current Gain I = 20 mA, V = 10 V, 1.5 h C CE fe f = 100 MHz h Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, 30 250 fe Input Impedance f = 1.0 kHz 0.75 7.5 h k ie -4 Voltage Feedback Ratio 0.10 8.0 h x10 re h Output Admittance 1.0 100 mhos oe SWITCHING CHARACTERISTICS Delay Time V = 30 V, I =150 mA, 15 ns t CC C d 20 ns t Rise Time I = 15 mA, V = 2.0 V r B1 BE ( off ) Storage Time V = 30 V, I =150 mA, 225 ns t CC C s Fall Time I = I = 15 mA 30 ns t B1 B2 f *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%