2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. 2N5060 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase (Note 2) R 75 C/W JC Thermal Resistance, JunctiontoAmbient R 200 C/W JA 2. This measurement is made with the case mounted flat side down on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) I , I DRM RRM (V = Rated V or V)T = 25C 10 A AK DRM RRM C T = 110C 50 A C ON CHARACTERISTICS *Peak Forward OnState Voltage (Note 4) V 1.7 V TM (I = 1.2 A peak T = 25C) TM A Gate Trigger Current (Continuous DC) (Note 5) I A GT *(V = 7.0 Vdc, R = 100 )T = 25C 200 AK L C T = 40C 350 C Gate Trigger Voltage (Continuous DC) (Note 5) T = 25C V 0.8 V C GT 1.2 *(V = 7.0 Vdc, R = 100 )T = 40C AK L C *Gate Non Trigger Voltage V V GD (V = Rated V , R = 100 )T = 110C 0.1 AK DRM L C Holding Current (Note 3) T = 25C I 5.0 mA C H *(V = 7.0 Vdc, initiating current = 20 mA) T = 40C 10 AK C Turn-On Time s Delay Time t 3.0 d Rise Time t 0.2 r (I = 1.0 mA, V = Rated V , GT D DRM Forward Current = 1.0 A, di/dt = 6.0 A/ s Turn-Off Time t s q (Forward Current = 1.0 A pulse, Pulse Width = 50 s, 0.1% Duty Cycle, di/dt = 6.0 A/ s, dv/dt = 20 V/ s, I = 1 mA) 2N5060, 2N5061 10 GT 2N5062, 2N5064 30 DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt 30 V/ s (Rated V , Exponential, R = 1 k ) DRM GK *Indicates JEDEC Registered Data. = 1000 is included in measurement. 3. R GK 4. Forward current applied for 1 ms maximum duration, duty cycle 1%. 5. R current is not included in measurement. GK