2N5088, 2N5089 Amplifier Transistors NPN Silicon Features 2N5088, 2N5089 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N5088 30 C B 2N5089 25 CollectorBase Breakdown Voltage V Vdc (BR)CBO 35 (I = 100 Adc, I = 0) 2N5088 C E 2N5089 30 Collector Cutoff Current I nAdc CBO (V = 20 Vdc, I = 0) 2N5088 50 CB E (V = 15 Vdc, I = 0) 2N5089 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) 50 EB(off) C (V = 4.5 Vdc, I = 0) 100 EB(off) C ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 5.0 Vdc) 2N5088 300 900 C CE 2N5089 400 1200 (I = 1.0 mAdc, V = 5.0 Vdc) 2N5088 350 C CE 450 2N5089 (I = 10 mAdc, V = 5.0 Vdc) (Note 2) 2N5088 300 C CE 2N5089 400 CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B BaseEmitter On Voltage V 0.8 Vdc BE(on) (I = 10 mAdc, V = 5.0 Vdc) (Note 2) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 50 MHz T (I = 500 Adc, V = 5.0 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 4.0 pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz) CB E EmitterBase Capacitance C 10 pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N5088 350 1400 C CE 2N5089 450 1800 Noise Figure NF dB 3.0 (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 2N5088 C CE S 2N5089 2.0 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model