2N5087 Amplifier Transistor PNP Silicon Features These are PbFree Devices* 2N5087 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 50 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 50 C E Collector Cutoff Current I nAdc CBO (V = 35 Vdc, I = 0) 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 5.0 Vdc) 250 800 C CE (I = 1.0 mAdc, V = 5.0 Vdc) 250 C CE (I = 10 mAdc, V = 5.0 Vdc) (Note 1) 250 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.3 C B Base Emitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) 0.85 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 500 Adc, V = 5.0 Vdc, f = 20 MHz) 40 C CE CollectorBase Capacitance C pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 250 900 C CE Noise Figure NF dB (I = 20 Adc, V = 5.0 Vdc, R = 10 k , f = 10 Hz/15.7 kHz) 2.0 C CE S (I = 100 Adc, V = 5.0 Vdc, R = 3.0 k , f = 1.0 kHz) 2.0 C CE S 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.