2N5401 Amplifier Transistors PNP Silicon Features These are PbFree Devices* 2N5401 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 150 C B Collector Base Breakdown Voltage V 160 Vdc (BR)CBO (I = 100 Adc, I = 0) C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector Cutoff Current I CBO (V = 120 Vdc, I = 0) 50 nAdc CB E (V = 120 Vdc, I = 0, T = 100C) 50 Adc CB E A Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 50 C CE (I = 10 mAdc, V = 5.0 Vdc) 60 240 C CE (I = 50 mAdc, V = 5.0 Vdc) 50 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200 C CE Noise Figure NF dB (I = 250 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 8.0 C CE S 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping 2N5401G TO92 5000 Unit / Bulk (Pb Free) 2N5401RLRAG TO92 2000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.