2N5401 2N5401 Amplifier Transistor Collector-Emitter Voltage: V = 150V CEO Collector Dissipation: P (max)=625mW C Suffix -C means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -160 V CBO Collector-Emitter Voltage -150 V V CEO Emitter-Base Voltage -5 V V EBO Collector Current -600 mA I C Collector Dissipation 625 mW P C Junction Temperature 150 C T J Storage Temperature -55 ~ 150 C T STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100 A, I =0 -160 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 -150 V CEO C B Emitter-Base Breakdown Voltage I = -10 A, I =0 -5 V BV EBO E C Collector Cut-off Current V = -120V, I =0 -50 nA I CBO CB E Emitter Cut-off Current V = -3V, I =0 -50 nA I EBO EB C * DC Current Gain I = -1mA, V = -5V 30 h FE C CE I = -10mA, V = -5V 60 240 C CE I = -50mA, V = -5V 50 C CE V (sat) * Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.2 V CE C B = -50mA, I = -5mA -0.5 V I C B (sat) * Base-Emitter Saturation Voltage I = -10mA, I = -1mA -1 V V BE C B I = -50mA, I = -5mA -1 V C B f Current Gain Bandwidth Product I = -10mA, V = -10V, 100 400 MHz T C CE f=100MHz C Output Capacitance V = -10V, I =0, f=1MHz 6 pF ob CB E N Noise Figure I = -250 A, V = -5V 8dB F C CE =1K R S f=10Hz to 15.7KHz * Pulse Test: Pulse Width300 s, Duty Cycle2% 2004 Fairchild Semiconductor Corporation Rev. B, May 20042N5401 Typical Characteristics 1000 -10 V = -5V CE I = 10 I C B V (sat) BE -1 100 VCE(sat) -0.1 10 -0.01 -1 -10 -100 -1000 -1 -10 -100 -1000 I mA , COLLECTOR CURRENT IC mA , COLLECTOR CURRENT C Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 100 IE = 0 V = -5V CE f = 1MHz -100 10 -10 1 -1 0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 V V , BASE-EMITTER VOLTAGE BE V V , COLLECTOR-BASE VOLTAGE CB Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance 1000 V = -10V CE 100 10 1 -1 -10 -100 -1000 IC mA , COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product 2004 Fairchild Semiconductor Corporation Rev. B, May 2004 I mA , COLLECTOR CURRENT C fT MHz , CURRENT GAIN-BANDWIDTH PRODUCT hFE, DC CURRENT GAIN VBE(sat), VCE(sat) V , SATURATION VOLTAGE Cob pF , CAPACITANCE