X-On Electronics has gained recognition as a prominent supplier of 2N6426G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6426G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6426G ON Semiconductor

2N6426G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6426G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Trans Darlington NPN 40V 0.5A 625mW 3-Pin TO-92 Box
Datasheet: 2N6426G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0702 ea
Line Total: USD 0.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8608
25 : USD 0.5654
100 : USD 0.448
500 : USD 0.3078
1000 : USD 0.2827
2500 : USD 0.2686
5000 : USD 0.2654
10000 : USD 0.2621
25000 : USD 0.2588

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0702
5 : USD 0.07
50 : USD 0.066
1000 : USD 0.0577
5000 : USD 0.0544

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2671
Multiples : 1
2671 : USD 0.1242

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 225
Multiples : 1
225 : USD 0.4667
500 : USD 0.3078
1000 : USD 0.2827
2500 : USD 0.2686
5000 : USD 0.2654
10000 : USD 0.2621
25000 : USD 0.2588

   
Manufacturer
Product Category
Configuration
Packaging
Hts
Type
Number Of Elements Per Chip
Maximum Collector-Emitter Voltage V
Maximum Collector Base Voltage V
Maximum Emitter Base Voltage V
Maximum Base Emitter Saturation Voltage V
Maximum Continuous Dc Collector Current A
Maximum Collector Cut-Off Current Ua
Maximum Collector-Emitter Saturation Voltage V
Minimum Dc Current Gain
Maximum Power Dissipation Mw
Minimum Operating Temperature °C
Maximum Operating Temperature °C
Automotive
Pin Count
Supplier Package
Standard Package Name
Military
Mounting
Package Height
Package Length
Package Width
Pcb Changed
Lead Shape
LoadingGif
 
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We are delighted to provide the 2N6426G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6426G and other electronic components in the Darlington Transistors category and beyond.

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2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* 2N6426, 2N6427 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) V 40 Vdc (BR)CEO (I = 10 mAdc, V = 0) C BE CollectorBase Breakdown Voltage V 40 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 1.0 Adc CES (V = 25 Vdc, I = 0) CE B Collector Cutoff Current I 50 nAdc CBO (V = 30 Vdc, I = 0) CB E Emitter Cutoff Current I 50 nAdc EBO (V = 10 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain, (Note 1) h FE (I = 10 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 10,000 100,000 (I = 100 mAdc, V = 5.0 Vdc) 2N6426 30,000 300,000 C CE 2N6427 20,000 200,000 (I = 500 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 14,000 140,000 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 0.5 mAdc) 0.71 1.2 C B (I = 500 mAdc, I = 0.5 mAdc 0.9 1.5 C B BaseEmitter Saturation Voltage V 1.52 2.0 Vdc BE(sat) (I = 500 mAdc, I = 0.5 mAdc) C B BaseEmitter On Voltage V 1.24 1.75 Vdc BE(on) (I = 50 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C 5.4 7.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 10 15 pF ibo (V = 1.0 Vdc, I = 0, f = 1.0 MHz) EB C Input Impedance h k ie (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 100 2000 C CE 2N6427 50 1000 SmallSignal Current Gain hfe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 20,000 C CE 2N6427 10,000 CurrentGain High Frequency h fe (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 2N6426 1.5 2.4 C CE 2N6427 1.3 2.4 Output Admittance h 1000 mhos oe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) C CE Noise Figure NF 3.0 10 dB (I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE S 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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