X-On Electronics has gained recognition as a prominent supplier of 2N6426RLRAG Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6426RLRAG Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6426RLRAG ON Semiconductor

2N6426RLRAG electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6426RLRAG
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Trans Darlington NPN 40V 0.5A 3-Pin TO-92 Ammo
Datasheet: 2N6426RLRAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
24: USD 0.3488 ea
Line Total: USD 8.37 
Availability - 0
MOQ: 24  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 24
Multiples : 1
24 : USD 0.3488
25 : USD 0.3199
50 : USD 0.2896

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Gain Bandwidth Product Ft
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6426RLRAG from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6426RLRAG and other electronic components in the Darlington Transistors category and beyond.

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2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* 2N6426, 2N6427 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) V 40 Vdc (BR)CEO (I = 10 mAdc, V = 0) C BE CollectorBase Breakdown Voltage V 40 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 1.0 Adc CES (V = 25 Vdc, I = 0) CE B Collector Cutoff Current I 50 nAdc CBO (V = 30 Vdc, I = 0) CB E Emitter Cutoff Current I 50 nAdc EBO (V = 10 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain, (Note 1) h FE (I = 10 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 10,000 100,000 (I = 100 mAdc, V = 5.0 Vdc) 2N6426 30,000 300,000 C CE 2N6427 20,000 200,000 (I = 500 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 14,000 140,000 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 0.5 mAdc) 0.71 1.2 C B (I = 500 mAdc, I = 0.5 mAdc 0.9 1.5 C B BaseEmitter Saturation Voltage V 1.52 2.0 Vdc BE(sat) (I = 500 mAdc, I = 0.5 mAdc) C B BaseEmitter On Voltage V 1.24 1.75 Vdc BE(on) (I = 50 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C 5.4 7.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 10 15 pF ibo (V = 1.0 Vdc, I = 0, f = 1.0 MHz) EB C Input Impedance h k ie (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 100 2000 C CE 2N6427 50 1000 SmallSignal Current Gain hfe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 20,000 C CE 2N6427 10,000 CurrentGain High Frequency h fe (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 2N6426 1.5 2.4 C CE 2N6427 1.3 2.4 Output Admittance h 1000 mhos oe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) C CE Noise Figure NF 3.0 10 dB (I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE S 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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