X-On Electronics has gained recognition as a prominent supplier of 2SB1183TL Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2SB1183TL Darlington Transistors are a product manufactured by ROHM. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2SB1183TL ROHM

2SB1183TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No. 2SB1183TL
Manufacturer: ROHM
Category: Darlington Transistors
Description: ROHM Semiconductor Darlington Transistors DVR PNP 40V 2A
Datasheet: 2SB1183TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4455 ea
Line Total: USD 1113.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 2SB1183TL More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4455
5000 : USD 0.429
10000 : USD 0.4268

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1183TL from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1183TL and other electronic components in the Darlington Transistors category and beyond.

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Additional Infomation About Product

2SB1183 / 2SB1239 Transistors Power transistor (40V, 2A) 2SB1183 / 2SB1239 External dimensions (Units : mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM : CPT3 (1) Base(Gate) RBE 4k (2) Collector(Drain) EIAJ : SC-63 (3) Emitter(Source) C : Collector E B : Base E : Emitter 2SB1239 2.5 6.8 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 0.65Max. Collector-base voltage VCBO 40 V Collector-emitter voltage VCER 40 V 0.5 Emitter-base voltage VEBO 5 V 2 A(DC) ( ) (2) (3) 1 Collector current IC 1 3 A(Pulse) 2.54 2.54 1.05 0.45 1 W Collector power 2SB1183 PC 10 W(Tc=25C) dissipation Taping specifications 2 2SB1239 1W Junction temperature Tj 150 C ROHM : ATV (1) Emitter Storage temperature Tstg 55~+150 C (2) Collector 1 Single pulse Pw=10ms 2 2 Printed circuit board 1.7 mm thick, collector plating 100mm or larger. (3) Base Packaging specifications and hFE Type 2SB1183 2SB1239 Package CPT3 ATV hFE 1k~200k 1k~ Code TL T146 Basic ordering unit (pieces) 2500 2500 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage 40 V BVCBO IC=50 A Collector-emitter breakdown voltage BVCER 40 V IC=1mA, RBE=10k Emitter-base breakdown voltage BVEBO 5 V IE=50 A Collector cutoff current ICBO 1 A VCB=24V Emitter cutoff current IEBO 1 A VEB=4V Collector-emitter saturation voltage VCE(sat) 1.5 V IC/IB=0.6A/1.2mA 2SB1183 1000 20000 DC current hFE VCE/IC=2V/0.5A transfer ratio 2SB1239 1000 Output capacitance Cob 11 pF VCB=10V, IE=0A, f=1MHz 1.0 ( ) ( ) ( ) 3 2 1 0.5 2.3 2.3 0.9 0.65 0.75 1.0 0.9 14.5 4.4 0.5 5.1 2.3 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Darlington Transistors category: Click to view products by ROHM manufacturer: Other Similar products are found below : NJVMJD128T4G 281287X BDV64B NJVMJD117T4G LB1205-L-E 2N6053 MPSA14 TIP140 MPSA13 TIP127L-BP 2N6383 ULN2003ACM/TR 2N7371 2N6058 2N6059 2N6051 MJ2501 MJ3001 2SB1560 2SB852KT146B 2SD2560 TIP112TU BCV27 MMBTA13-TP MMSTA28T146 NTE2557 NJVNJD35N04T4G MPSA29-D26Z FJB102TM BSP61H6327XTSA1 BU941ZPFI 2SD1980TL NTE2350 NTE245 NTE246 NTE2649 NTE46 NTE98 ULN2003ADR2G NTE2344 NTE2349 NTE2405 NTE243 NTE244 NTE247 NTE248 NTE249 NTE253 NTE2548 NTE261

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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