Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.2 +0.2 6.80.2 2.3 6.50.2 0.1 2) Complements the 2SD1760 / 2SD1864. C0.5 +0.2 5.1 0.1 0.50.1 Structure 0.65Max. 0.650.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.550.1 0.50.1 2.30.2 2.30.2 1.00.2 (1) (2) (3) 2.54 2.54 1.05 0.450.1 (1) (2) (3) (1) Base (1) Emitter ROHM : CPT3 (2) Collector ROHM : ATV (2) Collector (3) Emitter (3) Base EIAJ : SC-63 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 3 A (DC) 1 W Collector power 2SB1184 PC 15 W (TC=25C) dissipation 2SB1243 1 1 W Tj 150 C Junction temperature Tstg 55 to 150 C Storage temperature 2 1 Printed circuit board, 1.7mm thick, collector copper plating 100mm or larger. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage 60 IC= 50A BVCBO V 50 IC= 1mA Collector-emitter breakdown voltage BVCEO V 5 IE= 50A Emitter-base breakdown voltage BVEBO V 1 A VCB= 40V Collector cutoff current ICBO 1 A VEB= 4V Emitter cutoff current IEBO 1 IC/IB= 2A/ 0.2A Collector-emitter saturation voltage VCE(sat) V hFE 120 390 VCE= 3V, IC= 0.5A DC current transfer ratio Transition frequency fT 70 MHz VCE= 5V, IE=0.5A, f=30MHz Output capacitance Cob 50 pF VCB= 10V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2010.02 - Rev.C 1/3 c 2010 ROHM Co., Ltd. All rights reserved. +0.3 5.5 0.1 1.50.3 0.9 1.5 2.5 9.50.5 1.0 0.9 4.40.2 14.50.5 2SB1184 / 2SB1243 Data Sheet Packaging specifications and hFE Package Taping Code TL TV2 hFE Basic ordering unit (pieces) 2500 2500 Type 2SB1184 QR 2SB1243 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves 3.0 3.0 10 50mA VCE= 3V Tc=25C Tc=25C 45mA 50mA 40mA 5 45mA 35mA 2.5 2.5 40mA 30mA 20mA 35mA 25mA 2 30mA 25mA 2.0 2.0 1 20mA 15mA Ta=100C 15mA 0.5 25C 1.5 1.5 -25C 10mA 10mA 0.2 1.0 1.0 0.1 5mA 0.05 IB=5mA 0.5 0.5 PC=15W 0.02 IB=0mA IB=0mA 0 0.01 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter Fig.2 Grounded emitter output Fig.3 Grounded emitter output propagation characteristics characteristics ( ) characteristics ( ) 1000 1k 10 Ta=25C VCE= 3V Ta=25C 500 5 500 Ta=100C 25C 200 200 25C 2 VCE=5V 1 100 100 50 50 0.5 3V 20 20 0.2 10 10 0.1 IC/IB=50/1 5 5 0.05 20/1 2 2 10/1 0.02 1 1 0.01 0.010.02 0.05 0.10.2 0.5 1 2 5 10 0.010.02 0.050.10.2 0.5 1 2 5 10 0.010.02 0.050.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation collector current ( ) collector current ( ) voltage vs.collector current 1000 1000 10 Ta=25C Ta=25C lC/lB=10 500 5 VCE= 5V 500 f=1MHz IE=0A Ta= 25C 200 25C 200 2 VBE(sat) 100C 100 1 100 0.5 50 50 20 0.2 20 Ta=100C 25C 10 10 0.1 25C 5 0.05 VCE(sat) 5 2 2 0.02 1 1 0.01 20 50 100 200 5001000 0.2 0.5 1 2 5 10 12 5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 0.01 0.02 0.05 0.1 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs. vs. collector current emitter current collector base voltage Base-emitter saturation voltage vs. collector current www.rohm.com 2010.02 - Rev.C 2/3 c 2010 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A)