2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 z External dimensions (Unit : mm) z Features 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) +0.2 2.3 +0.2 6.50.2 0.1 4.5 (IC/IB = 2A / 0.2A) 0.1 C0.5 +0.2 +0.2 5.1 1.5 0.1 0.50.1 1.60.1 0.1 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. 0.650.1 0.75 (1) (2) (3) +0.1 0.4 0.9 0.05 0.550.1 0.40.1 0.50.1 0.40.1 2.30.2 2.30.2 1.00.2 1.50.1 1.50.1 3.00.2 z Structure (1) (2) (3) (1) Base (1) Base Epitaxial planar type ROHM : MPT3 (2) Collector ROHM : CPT3 (2) Collector EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter PNP silicon transistor Abbreviated symbol: BC 2SB1240 2.50.2 6.80.2 0.65Max. 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 (1) Emitter ROHM : ATV (2) Collector (3) Base Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V VEBO 5 V Emitter-base voltage 2 A(DC) Collector current IC 1 3 A (Pulse) 0.5 W 2SB1188 2 W 2 Collector power PC 2SB1182 10 W (Tc=25C) dissipation 2SB1240 1 W 3 Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C 1 Single pulse, Pw=100ms 2 When mounted on a 40400.7 mm ceramic board. 2 3 Printed circuit board, 1.7mm thick, collector copper plating 100mm or larger. Rev.A 1/3 4.00.3 +0.2 2.5 1.00.2 0.1 0.50.1 1.0 0.9 14.50.5 4.40.2 +0.3 5.5 0.1 1.50.3 0.9 1.5 2.5 9.50.52SB1188 / 2SB1182 / 2SB1240 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 VIC= 50A Collector-emitter breakdown voltage BVCEO 32 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A Collector cutoff current ICBO 1 A VCB= 20V Emitter cutoff current IEBO 1 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 0.5 0.8 V IC/IB= 2A/ 0.2A DC current transfer ratio hFE 82 390 VCE= 3V, IC= 0.5A Transition frequency fT 100 MHz VCE= 5V, IE=0.5A, f=100MHz Output capacitance Cob 50 pF VCB= 10V, IE=0A, f=1MHz Measured using pulse current. z Packaging specifications and hFE Package Taping Code T100 TL TV2 Type hFE Basic ordering unit (pieces) 1000 2500 2500 2SB1188 PQR 2SB1182 PQR 2SB1240 PQR hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 z Electrical characteristic curves 0.5 VCE= 3V Ta=25C Ta=25C 500 Ta=100C 1000 VCE= 6V 25C 0.4 3V 500 40C 1V 200 200 0.3 100 50 100 0.2 20 10 50 5 0.1 2 IB=0A 1 0 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 5 10 20 50 100 200 500 1000 2000 0 0.4 0.8 1.2 1.6 2 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs. characteristics collector curren ( ) characteristics Rev.A 2/3 250A 500A 1mA 750A 2mA 1.75mA 1.5mA 1.25mA 2.25mA 2.5mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE