Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 ( ) 1 (2) Absolute maximum ratings (Ta=25C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A 0.5 ROHM : MPT3 (1) Base 2SB1189 Collector power PC 2 W 1 (2) Collector dissipation EIAJ : SC-62 2SB1238 1 2 (3) Emitter Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 When mounted on a 40400.7 mm ceramic board. 2 2SB1238 2 Printed circuit board 1.7 mm thick, collector plating 1cm or larger. 2.5 6.8 Packaging specifications and hFE Type 2SB1189 2SB1238 0.65Max. Package MPT3 ATV hFE QR QR 0.5 Marking BD (1) (2) (3) Code T100 TV2 2.54 2.54 Basic ordering unit (pieces) 1000 2500 1.05 0.45 Denotes hFE Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 V IC=50A Collector-emitter breakdown voltage BVCEO 80 V IC=2mA Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 0.5 A VCB=50V Emitter cutoff current IEBO 0.5 VEB=4V A Collector-emitter saturation voltage VCE(sat) 0.2 0.4 V IC/IB=500mA/50mA DC current transfer ratio hFE 120 390 VCE/IC=3V/0.1A Transition frequency fT 100 MHz VCE=10V, IE=50mA, f=100MHz Output capacitance Cob 14 20 pF VCB=10V, IE=0A, f=1MHz www.rohm.com 2010.07 - Rev.B 1/2 c 2010 ROHM Co., Ltd. All rights reserved. 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.0 0.9 14.5 4.4 1.6 1.5 4.5Pw=10ms Pw=100ms DC 2SB1189 / 2SB1238 Data Sheet Electrical characteristics curves 1.0 50 Ta=25C Ta=25C Ta=25C 10mA VCE= 6V 20 9mA 0.8 500 10 5 0.6 VCE= 5V 200 2 0.4 1 100 2mA 0.5 3V 0.2 1mA 50 0.2 1V IB= 0mA 0 0.1 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current Ta=25C Ta=25C VCE= 5V Ta=25C f=1MHz 100 500 IE=0A 0.2 0.1 200 50 IC/IB=20/1 Cob 100 0.05 IC/IB=10/1 20 50 0.02 10 20 225 10050 0.01 0.5 1 2 5 10 20 1 5 10 20 50 100 200 500 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance Fig.4 Collector-emitter saturation voltage vs. collector-base voltage vs.collector current 1.0 Ta=25C f=1MHz Cib 100 0.5 IC=0A 0.2 0.1 50 0.05 0.02 20 0.01 0.005 10 0.002 Ta=25C Single pulse 0.001 0.5 1 2 5 10 20 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Emitter input capacitance Fig.8 Safe operating area (2SB1189) vs. emitter-base voltage www.rohm.com 2010.07 - Rev.B 2/2 c 2010 ROHM Co., Ltd. All rights reserved. 3mA 4mA 7mA 6mA 5mA 8mA EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE