X-On Electronics has gained recognition as a prominent supplier of 2SB1197KT146Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1197KT146Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1197KT146Q ROHM

Hot 2SB1197KT146Q electronic component of ROHM
2SB1197KT146Q ROHM
2SB1197KT146Q Bipolar Transistors - BJT
2SB1197KT146Q  Semiconductors

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See Product Specifications
Part No. 2SB1197KT146Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 32V 0.8A
Datasheet: 2SB1197KT146Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
691: USD 0.0941 ea
Line Total: USD 65.02 
Availability - 30996
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ: 691  Multiples: 1
Pack Size: 1
Availability Price Quantity
7772
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2486
100 : USD 0.1188
1000 : USD 0.0935
3000 : USD 0.0891
9000 : USD 0.0715
45000 : USD 0.0682
99000 : USD 0.0671

30996
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 691
Multiples : 1
691 : USD 0.0941
907 : USD 0.0716
1020 : USD 0.0637
2000 : USD 0.0625
3000 : USD 0.0623
6000 : USD 0.0619
12000 : USD 0.0606

1811
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 625
Multiples : 1
625 : USD 0.1572
1000 : USD 0.152

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the 2SB1197KT146Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1197KT146Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) llOutline SOT-346 Parameter Value SC-59 V -32V CEO I -800mA C SMT3 llFeatures llInner circuit 1) Low V . CE(sat) V -500mV CE(sat) ( I = -500mA / I = -50mA) C B 2) I = -0.8A. C 3) Complements the 2SD1781K. llApplication LOW FREQUENCY POWER AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1197K 2928 T146 180 8 3000 AH (SMT3) www.rohm.com 1/6 20160808 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SB1197K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -40 V CBO V Collector-emitter voltage -32 V CEO V Emitter-base voltage -5 V EBO I Collector current -800 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -40 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -32 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -20V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -50mA - - -500 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -5V, I = 50mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 30 pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120 - 270 180 - 390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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