2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) llOutline SOT-346 Parameter Value SC-59 V -32V CEO I -800mA C SMT3 llFeatures llInner circuit 1) Low V . CE(sat) V -500mV CE(sat) ( I = -500mA / I = -50mA) C B 2) I = -0.8A. C 3) Complements the 2SD1781K. llApplication LOW FREQUENCY POWER AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1197K 2928 T146 180 8 3000 AH (SMT3) www.rohm.com 1/6 20160808 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SB1197K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -40 V CBO V Collector-emitter voltage -32 V CEO V Emitter-base voltage -5 V EBO I Collector current -800 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -40 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -32 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -20V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -50mA - - -500 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -5V, I = 50mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 30 pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120 - 270 180 - 390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.002